Abstract
This work investigates temperature-dependent device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) grown by a metal-organic chemical vapor deposition (MOCVD) system, and passivated by using hydrogen peroxide (H2O2) oxidation method. The present oxide-passivated AlGaN/GaN HEMT can effectively improve device performances, including current drive, transconductance, gate-drain forward turn-on voltage (Von), and gate-drain reverse breakdown voltage (BVGD) at 300-480 K. In addition, improved RF and power performances have also been achieved as compared with an unpassivated device. The present oxide-passivated AlGaN/GaN HEMT is promising for high-temperature and high-power monolithic microwave integrated circuit (MMIC) applications.
| Original language | English |
|---|---|
| Journal | ECS Journal of Solid State Science and Technology |
| Volume | 1 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2012 Dec 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
Cite this
}
Temperature-dependent investigation of AlGaN/GaN oxide-passivated HEMT by using hydrogen peroxide oxidation method. / Liu, Han Yin; Chou, Bo Yi; Hsu, Wei-Chou; Lee, Ching Sung; Ho, Chiu Sheng.
In: ECS Journal of Solid State Science and Technology, Vol. 1, No. 4, 01.12.2012.Research output: Contribution to journal › Article
TY - JOUR
T1 - Temperature-dependent investigation of AlGaN/GaN oxide-passivated HEMT by using hydrogen peroxide oxidation method
AU - Liu, Han Yin
AU - Chou, Bo Yi
AU - Hsu, Wei-Chou
AU - Lee, Ching Sung
AU - Ho, Chiu Sheng
PY - 2012/12/1
Y1 - 2012/12/1
N2 - This work investigates temperature-dependent device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) grown by a metal-organic chemical vapor deposition (MOCVD) system, and passivated by using hydrogen peroxide (H2O2) oxidation method. The present oxide-passivated AlGaN/GaN HEMT can effectively improve device performances, including current drive, transconductance, gate-drain forward turn-on voltage (Von), and gate-drain reverse breakdown voltage (BVGD) at 300-480 K. In addition, improved RF and power performances have also been achieved as compared with an unpassivated device. The present oxide-passivated AlGaN/GaN HEMT is promising for high-temperature and high-power monolithic microwave integrated circuit (MMIC) applications.
AB - This work investigates temperature-dependent device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) grown by a metal-organic chemical vapor deposition (MOCVD) system, and passivated by using hydrogen peroxide (H2O2) oxidation method. The present oxide-passivated AlGaN/GaN HEMT can effectively improve device performances, including current drive, transconductance, gate-drain forward turn-on voltage (Von), and gate-drain reverse breakdown voltage (BVGD) at 300-480 K. In addition, improved RF and power performances have also been achieved as compared with an unpassivated device. The present oxide-passivated AlGaN/GaN HEMT is promising for high-temperature and high-power monolithic microwave integrated circuit (MMIC) applications.
UR - http://www.scopus.com/inward/record.url?scp=84879527268&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879527268&partnerID=8YFLogxK
U2 - 10.1149/2.007204jss
DO - 10.1149/2.007204jss
M3 - Article
VL - 1
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 4
ER -