Abstract
This work investigates temperature-dependent device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) grown by a metal-organic chemical vapor deposition (MOCVD) system, and passivated by using hydrogen peroxide (H2O2) oxidation method. The present oxide-passivated AlGaN/GaN HEMT can effectively improve device performances, including current drive, transconductance, gate-drain forward turn-on voltage (Von), and gate-drain reverse breakdown voltage (BVGD) at 300-480 K. In addition, improved RF and power performances have also been achieved as compared with an unpassivated device. The present oxide-passivated AlGaN/GaN HEMT is promising for high-temperature and high-power monolithic microwave integrated circuit (MMIC) applications.
Original language | English |
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Journal | ECS Journal of Solid State Science and Technology |
Volume | 1 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2012 Dec 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials