Temperature-dependent investigation of AlGaN/GaN oxide-passivated HEMT by using hydrogen peroxide oxidation method

Han Yin Liu, Bo Yi Chou, Wei-Chou Hsu, Ching Sung Lee, Chiu Sheng Ho

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

This work investigates temperature-dependent device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) grown by a metal-organic chemical vapor deposition (MOCVD) system, and passivated by using hydrogen peroxide (H2O2) oxidation method. The present oxide-passivated AlGaN/GaN HEMT can effectively improve device performances, including current drive, transconductance, gate-drain forward turn-on voltage (Von), and gate-drain reverse breakdown voltage (BVGD) at 300-480 K. In addition, improved RF and power performances have also been achieved as compared with an unpassivated device. The present oxide-passivated AlGaN/GaN HEMT is promising for high-temperature and high-power monolithic microwave integrated circuit (MMIC) applications.

Original languageEnglish
JournalECS Journal of Solid State Science and Technology
Volume1
Issue number4
DOIs
Publication statusPublished - 2012 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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