Temperature-dependent investigation of AlGaN/GaN oxide-passivated HEMT by using hydrogen peroxide oxidation method

Han Yin Liu, Bo Yi Chou, Wei-Chou Hsu, Ching Sung Lee, Chiu Sheng Ho

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

This work investigates temperature-dependent device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) grown by a metal-organic chemical vapor deposition (MOCVD) system, and passivated by using hydrogen peroxide (H2O2) oxidation method. The present oxide-passivated AlGaN/GaN HEMT can effectively improve device performances, including current drive, transconductance, gate-drain forward turn-on voltage (Von), and gate-drain reverse breakdown voltage (BVGD) at 300-480 K. In addition, improved RF and power performances have also been achieved as compared with an unpassivated device. The present oxide-passivated AlGaN/GaN HEMT is promising for high-temperature and high-power monolithic microwave integrated circuit (MMIC) applications.

Original languageEnglish
JournalECS Journal of Solid State Science and Technology
Volume1
Issue number4
DOIs
Publication statusPublished - 2012 Dec 1

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High electron mobility transistors
Hydrogen peroxide
Oxides
Hydrogen Peroxide
Oxidation
Organic Chemicals
Organic chemicals
Monolithic microwave integrated circuits
Transconductance
Electric breakdown
Temperature
Chemical vapor deposition
Metals
Electric potential
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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title = "Temperature-dependent investigation of AlGaN/GaN oxide-passivated HEMT by using hydrogen peroxide oxidation method",
abstract = "This work investigates temperature-dependent device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) grown by a metal-organic chemical vapor deposition (MOCVD) system, and passivated by using hydrogen peroxide (H2O2) oxidation method. The present oxide-passivated AlGaN/GaN HEMT can effectively improve device performances, including current drive, transconductance, gate-drain forward turn-on voltage (Von), and gate-drain reverse breakdown voltage (BVGD) at 300-480 K. In addition, improved RF and power performances have also been achieved as compared with an unpassivated device. The present oxide-passivated AlGaN/GaN HEMT is promising for high-temperature and high-power monolithic microwave integrated circuit (MMIC) applications.",
author = "Liu, {Han Yin} and Chou, {Bo Yi} and Wei-Chou Hsu and Lee, {Ching Sung} and Ho, {Chiu Sheng}",
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Temperature-dependent investigation of AlGaN/GaN oxide-passivated HEMT by using hydrogen peroxide oxidation method. / Liu, Han Yin; Chou, Bo Yi; Hsu, Wei-Chou; Lee, Ching Sung; Ho, Chiu Sheng.

In: ECS Journal of Solid State Science and Technology, Vol. 1, No. 4, 01.12.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Temperature-dependent investigation of AlGaN/GaN oxide-passivated HEMT by using hydrogen peroxide oxidation method

AU - Liu, Han Yin

AU - Chou, Bo Yi

AU - Hsu, Wei-Chou

AU - Lee, Ching Sung

AU - Ho, Chiu Sheng

PY - 2012/12/1

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AB - This work investigates temperature-dependent device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) grown by a metal-organic chemical vapor deposition (MOCVD) system, and passivated by using hydrogen peroxide (H2O2) oxidation method. The present oxide-passivated AlGaN/GaN HEMT can effectively improve device performances, including current drive, transconductance, gate-drain forward turn-on voltage (Von), and gate-drain reverse breakdown voltage (BVGD) at 300-480 K. In addition, improved RF and power performances have also been achieved as compared with an unpassivated device. The present oxide-passivated AlGaN/GaN HEMT is promising for high-temperature and high-power monolithic microwave integrated circuit (MMIC) applications.

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