Temperature-dependent investigation of AlGaN/GaN oxide-passivated HEMT by using hydrogen peroxide oxidation method

Han Yin Liu; Bo Yi Chou; Wei Chou Hsu; Ching Sung Lee; Chiu Sheng Ho

doi:10.1149/2.007204jss

Temperature-dependent investigation of AlGaN/GaN oxide-passivated HEMT by using hydrogen peroxide oxidation method

Han Yin Liu
, Bo Yi Chou
, Wei Chou Hsu
, Ching Sung Lee
, Chiu Sheng Ho

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

This work investigates temperature-dependent device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) grown by a metal-organic chemical vapor deposition (MOCVD) system, and passivated by using hydrogen peroxide (H₂O₂) oxidation method. The present oxide-passivated AlGaN/GaN HEMT can effectively improve device performances, including current drive, transconductance, gate-drain forward turn-on voltage (V_on), and gate-drain reverse breakdown voltage (BV_GD) at 300-480 K. In addition, improved RF and power performances have also been achieved as compared with an unpassivated device. The present oxide-passivated AlGaN/GaN HEMT is promising for high-temperature and high-power monolithic microwave integrated circuit (MMIC) applications.

Original language	English
Pages (from-to)	Q86-Q90
Journal	ECS Journal of Solid State Science and Technology
Volume	1
Issue number	4
DOIs	https://doi.org/10.1149/2.007204jss
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1149/2.007204jss

Cite this

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title = "Temperature-dependent investigation of AlGaN/GaN oxide-passivated HEMT by using hydrogen peroxide oxidation method",

abstract = "This work investigates temperature-dependent device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) grown by a metal-organic chemical vapor deposition (MOCVD) system, and passivated by using hydrogen peroxide (H2O2) oxidation method. The present oxide-passivated AlGaN/GaN HEMT can effectively improve device performances, including current drive, transconductance, gate-drain forward turn-on voltage (Von), and gate-drain reverse breakdown voltage (BVGD) at 300-480 K. In addition, improved RF and power performances have also been achieved as compared with an unpassivated device. The present oxide-passivated AlGaN/GaN HEMT is promising for high-temperature and high-power monolithic microwave integrated circuit (MMIC) applications.",

author = "Liu, \{Han Yin\} and Chou, \{Bo Yi\} and Hsu, \{Wei Chou\} and Lee, \{Ching Sung\} and Ho, \{Chiu Sheng\}",

year = "2012",

doi = "10.1149/2.007204jss",

language = "English",

volume = "1",

pages = "Q86--Q90",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

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TY - JOUR

T1 - Temperature-dependent investigation of AlGaN/GaN oxide-passivated HEMT by using hydrogen peroxide oxidation method

AU - Liu, Han Yin

AU - Chou, Bo Yi

AU - Hsu, Wei Chou

AU - Lee, Ching Sung

AU - Ho, Chiu Sheng

PY - 2012

Y1 - 2012

N2 - This work investigates temperature-dependent device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) grown by a metal-organic chemical vapor deposition (MOCVD) system, and passivated by using hydrogen peroxide (H2O2) oxidation method. The present oxide-passivated AlGaN/GaN HEMT can effectively improve device performances, including current drive, transconductance, gate-drain forward turn-on voltage (Von), and gate-drain reverse breakdown voltage (BVGD) at 300-480 K. In addition, improved RF and power performances have also been achieved as compared with an unpassivated device. The present oxide-passivated AlGaN/GaN HEMT is promising for high-temperature and high-power monolithic microwave integrated circuit (MMIC) applications.

AB - This work investigates temperature-dependent device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) grown by a metal-organic chemical vapor deposition (MOCVD) system, and passivated by using hydrogen peroxide (H2O2) oxidation method. The present oxide-passivated AlGaN/GaN HEMT can effectively improve device performances, including current drive, transconductance, gate-drain forward turn-on voltage (Von), and gate-drain reverse breakdown voltage (BVGD) at 300-480 K. In addition, improved RF and power performances have also been achieved as compared with an unpassivated device. The present oxide-passivated AlGaN/GaN HEMT is promising for high-temperature and high-power monolithic microwave integrated circuit (MMIC) applications.

UR - https://www.scopus.com/pages/publications/84879527268

UR - https://www.scopus.com/pages/publications/84879527268#tab=citedBy

U2 - 10.1149/2.007204jss

DO - 10.1149/2.007204jss

M3 - Article

AN - SCOPUS:84879527268

SN - 2162-8769

VL - 1

SP - Q86-Q90

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 4

ER -

Temperature-dependent investigation of AlGaN/GaN oxide-passivated HEMT by using hydrogen peroxide oxidation method

Abstract

All Science Journal Classification (ASJC) codes

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