Temperature-dependent morphology of three-dimensional InAs islands grown on silicon

P. C. Sharma; K. W. Alt; D. Y. Yeh; K. L. Wang

doi:10.1063/1.124665

Temperature-dependent morphology of three-dimensional InAs islands grown on silicon

P. C. Sharma, K. W. Alt, D. Y. Yeh, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Atomic force microscopy was used to investigate Si-based InAs islands' temperature-dependent morphology. It was found that at temperatures from 400 to 425 °C, InAs islands have the same dimensional distributions and posses long-term stability. They also undergo morphological changes when exposed to an annealing temperature of more than 700 °C. The InAs islands also exhibit Ostwald ripening through an improved surface diffusion mechanism at high annealing temperatures.

Original language	English
Pages (from-to)	1273-1275
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	9
DOIs	https://doi.org/10.1063/1.124665
Publication status	Published - 1999 Aug 30

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.124665

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abstract = "Atomic force microscopy was used to investigate Si-based InAs islands' temperature-dependent morphology. It was found that at temperatures from 400 to 425 °C, InAs islands have the same dimensional distributions and posses long-term stability. They also undergo morphological changes when exposed to an annealing temperature of more than 700 °C. The InAs islands also exhibit Ostwald ripening through an improved surface diffusion mechanism at high annealing temperatures.",

author = "Sharma, {P. C.} and Alt, {K. W.} and Yeh, {D. Y.} and Wang, {K. L.}",

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AU - Alt, K. W.

AU - Yeh, D. Y.

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PY - 1999/8/30

Y1 - 1999/8/30

N2 - Atomic force microscopy was used to investigate Si-based InAs islands' temperature-dependent morphology. It was found that at temperatures from 400 to 425 °C, InAs islands have the same dimensional distributions and posses long-term stability. They also undergo morphological changes when exposed to an annealing temperature of more than 700 °C. The InAs islands also exhibit Ostwald ripening through an improved surface diffusion mechanism at high annealing temperatures.

AB - Atomic force microscopy was used to investigate Si-based InAs islands' temperature-dependent morphology. It was found that at temperatures from 400 to 425 °C, InAs islands have the same dimensional distributions and posses long-term stability. They also undergo morphological changes when exposed to an annealing temperature of more than 700 °C. The InAs islands also exhibit Ostwald ripening through an improved surface diffusion mechanism at high annealing temperatures.

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Temperature-dependent morphology of three-dimensional InAs islands grown on silicon

Abstract

All Science Journal Classification (ASJC) codes

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