Temperature-dependent parameters of band anticrossing in InGaPN alloys

K. I. Lin, T. S. Wang, J. T. Tsai, J. S. Hwang

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4 Citations (Scopus)


Temperature-dependent photoreflectance (PR) measurements are employed to characterize the conduction band structure of In0.54 Ga0.46 P1-y Ny (y=0 and 0.02) grown on GaAs substrates. The band gap and the upper subband E+ transition are observed in InGaPN as predicted by the band anticrossing (BAC) model. To investigate the energetic positions of the features in the PR spectra, a Kramers-Kronig analysis is proposed. Based on the PR data and the BAC model, we find that the energy EN of isolated nitrogen states shifts significantly to higher energies with decreasing temperature. Simultaneously, the interaction potential V between the nitrogen states and the unperturbed conduction band also rises to higher values. At 293 K, EN =2.054 eV and V=1.513 eV are determined. The thermal shifts of EN and V are d EN /dT≈-0.43 meV/K and dV/dT≈-0.67 meV/K, respectively. The temperature-dependent EN level and interaction potential V are attributed to the lattice distortions, which can be affected by temperature-induced changes in deformation potential. This information is important for overall validity of the BAC model to dilute nitride InGaPN alloys.

Original languageEnglish
Article number016109
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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