Temperature-dependent properties of Pd/GaN Schottky type hydrogen sensors with Cl 2 plasma surface treatments

Tai You Chen; Huey Ing Chen; Po Shun Chiu; Chien Chang Huang; Chi Shiang Hsu; Po Cheng Chou; Rong Chau Liu; Wen Chau Liu

doi:10.1016/j.matchemphys.2012.04.038

Temperature-dependent properties of Pd/GaN Schottky type hydrogen sensors with Cl ₂ plasma surface treatments

Tai You Chen, Huey Ing Chen, Po Shun Chiu, Chien Chang Huang, Chi Shiang Hsu, Po Cheng Chou, Rong Chau Liu, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Temperature-dependent hydrogen sensing properties of Pd/GaN Schottky type sensors with different Cl ₂ plasma surface treated times are studied and demonstrated. The sensing behaviors are studied in terms of Schottky barrier height variation Δ _B, sensing response S _r, and transient-state response times. The highest sensing response (S _r) values of 7.1 × 10 ⁴ and 2.12 × 10 ⁵ are obtained in forward- and reverse-bias voltages, respectively, upon exposure to a 10,000 ppm H ₂/air gas at 30°C. In addition, a correspondingly large Schottky barrier height variation Δ _B of 0.38 eV is found. This could be attributed to the effective dissociation of hydrogen molecules due to a rougher Pd surface and lower baseline current. Moreover, the studied devices with Cl ₂ plasma surface treatment have a stable and widespread reverse voltage operation regime. From transient-state behaviors measurement, the studied device with a 30 s plasma surface treatment shows the overshooting phenomenon and fast response (recovery) time of 4 (5) s.

Original language	English
Pages (from-to)	150-157
Number of pages	8
Journal	Materials Chemistry and Physics
Volume	135
Issue number	1
DOIs	https://doi.org/10.1016/j.matchemphys.2012.04.038
Publication status	Published - 2012 Jul 16

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics

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10.1016/j.matchemphys.2012.04.038

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@article{d55e504f8b704d1eb3bc921076fced6c,

title = "Temperature-dependent properties of Pd/GaN Schottky type hydrogen sensors with Cl 2 plasma surface treatments",

abstract = "Temperature-dependent hydrogen sensing properties of Pd/GaN Schottky type sensors with different Cl 2 plasma surface treated times are studied and demonstrated. The sensing behaviors are studied in terms of Schottky barrier height variation Δ B, sensing response S r, and transient-state response times. The highest sensing response (S r) values of 7.1 × 10 4 and 2.12 × 10 5 are obtained in forward- and reverse-bias voltages, respectively, upon exposure to a 10,000 ppm H 2/air gas at 30°C. In addition, a correspondingly large Schottky barrier height variation Δ B of 0.38 eV is found. This could be attributed to the effective dissociation of hydrogen molecules due to a rougher Pd surface and lower baseline current. Moreover, the studied devices with Cl 2 plasma surface treatment have a stable and widespread reverse voltage operation regime. From transient-state behaviors measurement, the studied device with a 30 s plasma surface treatment shows the overshooting phenomenon and fast response (recovery) time of 4 (5) s.",

author = "Chen, {Tai You} and Chen, {Huey Ing} and Chiu, {Po Shun} and Huang, {Chien Chang} and Hsu, {Chi Shiang} and Chou, {Po Cheng} and Liu, {Rong Chau} and Liu, {Wen Chau}",

note = "Funding Information: This work was supported in part by the National Science Council of the Republic of China under contract no. NSC-100-2221-E-006-044-MY3. ",

year = "2012",

month = jul,

day = "16",

doi = "10.1016/j.matchemphys.2012.04.038",

language = "English",

volume = "135",

pages = "150--157",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Temperature-dependent properties of Pd/GaN Schottky type hydrogen sensors with Cl 2 plasma surface treatments

AU - Chen, Tai You

AU - Chen, Huey Ing

AU - Chiu, Po Shun

AU - Huang, Chien Chang

AU - Hsu, Chi Shiang

AU - Chou, Po Cheng

AU - Liu, Rong Chau

AU - Liu, Wen Chau

N1 - Funding Information: This work was supported in part by the National Science Council of the Republic of China under contract no. NSC-100-2221-E-006-044-MY3.

PY - 2012/7/16

Y1 - 2012/7/16

N2 - Temperature-dependent hydrogen sensing properties of Pd/GaN Schottky type sensors with different Cl 2 plasma surface treated times are studied and demonstrated. The sensing behaviors are studied in terms of Schottky barrier height variation Δ B, sensing response S r, and transient-state response times. The highest sensing response (S r) values of 7.1 × 10 4 and 2.12 × 10 5 are obtained in forward- and reverse-bias voltages, respectively, upon exposure to a 10,000 ppm H 2/air gas at 30°C. In addition, a correspondingly large Schottky barrier height variation Δ B of 0.38 eV is found. This could be attributed to the effective dissociation of hydrogen molecules due to a rougher Pd surface and lower baseline current. Moreover, the studied devices with Cl 2 plasma surface treatment have a stable and widespread reverse voltage operation regime. From transient-state behaviors measurement, the studied device with a 30 s plasma surface treatment shows the overshooting phenomenon and fast response (recovery) time of 4 (5) s.

AB - Temperature-dependent hydrogen sensing properties of Pd/GaN Schottky type sensors with different Cl 2 plasma surface treated times are studied and demonstrated. The sensing behaviors are studied in terms of Schottky barrier height variation Δ B, sensing response S r, and transient-state response times. The highest sensing response (S r) values of 7.1 × 10 4 and 2.12 × 10 5 are obtained in forward- and reverse-bias voltages, respectively, upon exposure to a 10,000 ppm H 2/air gas at 30°C. In addition, a correspondingly large Schottky barrier height variation Δ B of 0.38 eV is found. This could be attributed to the effective dissociation of hydrogen molecules due to a rougher Pd surface and lower baseline current. Moreover, the studied devices with Cl 2 plasma surface treatment have a stable and widespread reverse voltage operation regime. From transient-state behaviors measurement, the studied device with a 30 s plasma surface treatment shows the overshooting phenomenon and fast response (recovery) time of 4 (5) s.

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Temperature-dependent properties of Pd/GaN Schottky type hydrogen sensors with Cl ₂ plasma surface treatments

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