Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor

Wen Chau Liu, Hsi Jen Pan, Wei Chou Wang, Kong Beng Thei, Kwun Wei Lin, Kuo Hui Yu, Chin Chuan Cheng

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the dc performance of conventional InGaAs-based single HBTs, the quaternary In0.53 Ga0.34Al0.13 As with a wider bandgap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. Based on the breakdown mechanism of avalanche multiplication, the negative temperature dependence of breakdown voltage is attributed to the positive temperature-dependent impact ionization coefficient. Furthermore, the temperature dependence of current gain is investigated and reported. It is believed that the suppression of hole injection current with decreasing temperature is responsible for the opposite variation of current gains at high current levels.

Original languageEnglish
Pages (from-to)524-527
Number of pages4
JournalIEEE Electron Device Letters
Issue number11
Publication statusPublished - 2000 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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