Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor

Wen Chau Liu; Hsi Jen Pan; Wei Chou Wang; Kong Beng Thei; Kwun Wei Lin; Kuo Hui Yu; Chin Chuan Cheng

doi:10.1109/55.877199

Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor

Wen Chau Liu, Hsi Jen Pan, Wei Chou Wang, Kong Beng Thei, Kwun Wei Lin, Kuo Hui Yu, Chin Chuan Cheng

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the dc performance of conventional InGaAs-based single HBTs, the quaternary In_0.53 Ga_0.34Al_0.13 As with a wider bandgap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. Based on the breakdown mechanism of avalanche multiplication, the negative temperature dependence of breakdown voltage is attributed to the positive temperature-dependent impact ionization coefficient. Furthermore, the temperature dependence of current gain is investigated and reported. It is believed that the suppression of hole injection current with decreasing temperature is responsible for the opposite variation of current gains at high current levels.

Original language	English
Pages (from-to)	524-527
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	21
Issue number	11
DOIs	https://doi.org/10.1109/55.877199
Publication status	Published - 2000 Nov

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.877199

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@article{8008f823744e431eaf6a798695bb0c1c,

title = "Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor",

abstract = "In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the dc performance of conventional InGaAs-based single HBTs, the quaternary In0.53 Ga0.34Al0.13 As with a wider bandgap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. Based on the breakdown mechanism of avalanche multiplication, the negative temperature dependence of breakdown voltage is attributed to the positive temperature-dependent impact ionization coefficient. Furthermore, the temperature dependence of current gain is investigated and reported. It is believed that the suppression of hole injection current with decreasing temperature is responsible for the opposite variation of current gains at high current levels.",

author = "Liu, {Wen Chau} and Pan, {Hsi Jen} and Wang, {Wei Chou} and Thei, {Kong Beng} and Lin, {Kwun Wei} and Yu, {Kuo Hui} and Cheng, {Chin Chuan}",

note = "Funding Information: Manuscript received June 23, 2000. This work was supported by the National Science Council of Taiwan, R.O.C., under Contract no. NSC 89-2215-E-006-012. The review of this letter was arranged by Editor E. Sangiorgi.",

year = "2000",

month = nov,

doi = "10.1109/55.877199",

language = "English",

volume = "21",

pages = "524--527",

journal = "IEEE Electron Device Letters",

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T1 - Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor

AU - Liu, Wen Chau

AU - Pan, Hsi Jen

AU - Wang, Wei Chou

AU - Thei, Kong Beng

AU - Lin, Kwun Wei

AU - Yu, Kuo Hui

AU - Cheng, Chin Chuan

N1 - Funding Information: Manuscript received June 23, 2000. This work was supported by the National Science Council of Taiwan, R.O.C., under Contract no. NSC 89-2215-E-006-012. The review of this letter was arranged by Editor E. Sangiorgi.

PY - 2000/11

Y1 - 2000/11

N2 - In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the dc performance of conventional InGaAs-based single HBTs, the quaternary In0.53 Ga0.34Al0.13 As with a wider bandgap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. Based on the breakdown mechanism of avalanche multiplication, the negative temperature dependence of breakdown voltage is attributed to the positive temperature-dependent impact ionization coefficient. Furthermore, the temperature dependence of current gain is investigated and reported. It is believed that the suppression of hole injection current with decreasing temperature is responsible for the opposite variation of current gains at high current levels.

AB - In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the dc performance of conventional InGaAs-based single HBTs, the quaternary In0.53 Ga0.34Al0.13 As with a wider bandgap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. Based on the breakdown mechanism of avalanche multiplication, the negative temperature dependence of breakdown voltage is attributed to the positive temperature-dependent impact ionization coefficient. Furthermore, the temperature dependence of current gain is investigated and reported. It is believed that the suppression of hole injection current with decreasing temperature is responsible for the opposite variation of current gains at high current levels.

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JO - IEEE Electron Device Letters

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Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor

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