Temperature effect of a heterojunction bipolar transistor (HBT) with an emitter-edge-thinning structure

T. P. Chen; K. Y. Chu; L. Y. Chen; T. H. Tsai; C. W. Hung; W. C. Liu

doi:10.1109/EDSSC.2007.4450226

Temperature effect of a heterojunction bipolar transistor (HBT) with an emitter-edge-thinning structure

T. P. Chen, K. Y. Chu, L. Y. Chen, T. H. Tsai, C. W. Hung, W. C. Liu

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The temperature-dependent DC characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter-edge-thinning structure are demonstrated. Experimentally, due to the emitter-edge-thinning structure, higher current gains and wider collector current operation regime over the measured temperature range (300 - 400 K) are observed as compared to the conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on DC current gains, lower base surface recombination current densities, and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	717-720
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450226
Publication status	Published - 2007
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 2007 Dec 20 → 2007 Dec 22

Publication series

Name	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country/Territory	Taiwan
City	Tainan
Period	07-12-20 → 07-12-22

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2007.4450226

Cite this

Chen, T. P., Chu, K. Y., Chen, L. Y., Tsai, T. H., Hung, C. W., & Liu, W. C. (2007). Temperature effect of a heterojunction bipolar transistor (HBT) with an emitter-edge-thinning structure. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 717-720). Article 4450226 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450226

@inproceedings{2b372ebe959e4329ae2d36302c157b85,

title = "Temperature effect of a heterojunction bipolar transistor (HBT) with an emitter-edge-thinning structure",

abstract = "The temperature-dependent DC characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter-edge-thinning structure are demonstrated. Experimentally, due to the emitter-edge-thinning structure, higher current gains and wider collector current operation regime over the measured temperature range (300 - 400 K) are observed as compared to the conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on DC current gains, lower base surface recombination current densities, and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.",

author = "Chen, {T. P.} and Chu, {K. Y.} and Chen, {L. Y.} and Tsai, {T. H.} and Hung, {C. W.} and Liu, {W. C.}",

year = "2007",

doi = "10.1109/EDSSC.2007.4450226",

language = "English",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "717--720",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Chen, TP, Chu, KY, Chen, LY, Tsai, TH, Hung, CW & Liu, WC 2007, Temperature effect of a heterojunction bipolar transistor (HBT) with an emitter-edge-thinning structure. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450226, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 717-720, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450226

Temperature effect of a heterojunction bipolar transistor (HBT) with an emitter-edge-thinning structure. / Chen, T. P.; Chu, K. Y.; Chen, L. Y. et al.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 717-720 4450226 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Temperature effect of a heterojunction bipolar transistor (HBT) with an emitter-edge-thinning structure

AU - Chen, T. P.

AU - Chu, K. Y.

AU - Chen, L. Y.

AU - Tsai, T. H.

AU - Hung, C. W.

AU - Liu, W. C.

PY - 2007

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N2 - The temperature-dependent DC characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter-edge-thinning structure are demonstrated. Experimentally, due to the emitter-edge-thinning structure, higher current gains and wider collector current operation regime over the measured temperature range (300 - 400 K) are observed as compared to the conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on DC current gains, lower base surface recombination current densities, and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.

AB - The temperature-dependent DC characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter-edge-thinning structure are demonstrated. Experimentally, due to the emitter-edge-thinning structure, higher current gains and wider collector current operation regime over the measured temperature range (300 - 400 K) are observed as compared to the conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on DC current gains, lower base surface recombination current densities, and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.

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T3 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

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BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

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Chen TP, Chu KY, Chen LY, Tsai TH, Hung CW, Liu WC. Temperature effect of a heterojunction bipolar transistor (HBT) with an emitter-edge-thinning structure. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 717-720. 4450226. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). doi: 10.1109/EDSSC.2007.4450226

Temperature effect of a heterojunction bipolar transistor (HBT) with an emitter-edge-thinning structure

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