Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure

Tzu Pin Chen; Ssu I. Fu; Wen Shiung Lour; Jung Hui Tsai; Der Feng Guo; Wen-Chau Liu

doi:10.1149/1.2400729

Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure

Tzu Pin Chen, Ssu I. Fu, Wen Shiung Lour, Jung Hui Tsai, Der Feng Guo, Wen-Chau Liu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The temperature-dependent characteristics of an InGaPGaAs heterojunction bipolar transistor (HBT) with an emitter-edge-thinning structure are studied and demonstrated. Based on the use of the emitter-edge-thinning structure, higher current gain and lower base surface-recombination current density over the measured temperature range (300-400 K) are obtained. In addition, the device shows the improved thermal stability on dc current gain performance. Therefore, the studied HBT device with an emitter-edge-thinning structure has promise for low-power and higher temperature electronic applications.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	2
DOIs	https://doi.org/10.1149/1.2400729
Publication status	Published - 2007 Jan 10

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure",

abstract = "The temperature-dependent characteristics of an InGaPGaAs heterojunction bipolar transistor (HBT) with an emitter-edge-thinning structure are studied and demonstrated. Based on the use of the emitter-edge-thinning structure, higher current gain and lower base surface-recombination current density over the measured temperature range (300-400 K) are obtained. In addition, the device shows the improved thermal stability on dc current gain performance. Therefore, the studied HBT device with an emitter-edge-thinning structure has promise for low-power and higher temperature electronic applications.",

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AU - Chen, Tzu Pin

AU - Fu, Ssu I.

AU - Lour, Wen Shiung

AU - Tsai, Jung Hui

AU - Guo, Der Feng

AU - Liu, Wen-Chau

PY - 2007/1/10

Y1 - 2007/1/10

N2 - The temperature-dependent characteristics of an InGaPGaAs heterojunction bipolar transistor (HBT) with an emitter-edge-thinning structure are studied and demonstrated. Based on the use of the emitter-edge-thinning structure, higher current gain and lower base surface-recombination current density over the measured temperature range (300-400 K) are obtained. In addition, the device shows the improved thermal stability on dc current gain performance. Therefore, the studied HBT device with an emitter-edge-thinning structure has promise for low-power and higher temperature electronic applications.

AB - The temperature-dependent characteristics of an InGaPGaAs heterojunction bipolar transistor (HBT) with an emitter-edge-thinning structure are studied and demonstrated. Based on the use of the emitter-edge-thinning structure, higher current gain and lower base surface-recombination current density over the measured temperature range (300-400 K) are obtained. In addition, the device shows the improved thermal stability on dc current gain performance. Therefore, the studied HBT device with an emitter-edge-thinning structure has promise for low-power and higher temperature electronic applications.

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IS - 2

ER -

Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure

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