Temperature Effect of Double Gate-Stacked Layer ZrO2/LaAlO3 IGZO Thin-Film Transistors Prepared by AP-PECVD

Chien Hung Wu, Bo Wen Huang, Kow Ming Chang, Shui-Jinn Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	The 2nd International Conference on Innovation Trends in Multidisciplinary Academic Research
Place of Publication	Istanbul, Turkey
Publication status	Published - 2015 Oct 20

Cite this

@inproceedings{2e715526462f4ad7a0ca3207abb63cda,

title = "Temperature Effect of Double Gate-Stacked Layer ZrO2/LaAlO3 IGZO Thin-Film Transistors Prepared by AP-PECVD",

author = "Wu, {Chien Hung} and Huang, {Bo Wen} and Chang, {Kow Ming} and Shui-Jinn Wang",

year = "2015",

month = oct,

day = "20",

language = "English",

booktitle = "The 2nd International Conference on Innovation Trends in Multidisciplinary Academic Research",

}

Temperature Effect of Double Gate-Stacked Layer ZrO2/LaAlO3 IGZO Thin-Film Transistors Prepared by AP-PECVD. / Wu, Chien Hung; Huang, Bo Wen; Chang, Kow Ming et al.
The 2nd International Conference on Innovation Trends in Multidisciplinary Academic Research. Istanbul, Turkey, 2015.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Temperature Effect of Double Gate-Stacked Layer ZrO2/LaAlO3 IGZO Thin-Film Transistors Prepared by AP-PECVD

AU - Wu, Chien Hung

AU - Huang, Bo Wen

AU - Chang, Kow Ming

AU - Wang, Shui-Jinn

PY - 2015/10/20

Y1 - 2015/10/20

M3 - Conference contribution

BT - The 2nd International Conference on Innovation Trends in Multidisciplinary Academic Research

CY - Istanbul, Turkey

ER -