Temperature Effect of Double Gate-Stacked Layer ZrO2/LaAlO3 IGZO Thin-Film Transistors Prepared by AP-PECVD

Chien Hung Wu, Bo Wen Huang, Kow Ming Chang, Shui-Jinn Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationThe 2nd International Conference on Innovation Trends in Multidisciplinary Academic Research
Place of Publication Istanbul, Turkey
Publication statusPublished - 2015 Oct 20

Cite this

Wu, C. H., Huang, B. W., Chang, K. M., & Wang, S-J. (2015). Temperature Effect of Double Gate-Stacked Layer ZrO2/LaAlO3 IGZO Thin-Film Transistors Prepared by AP-PECVD. In The 2nd International Conference on Innovation Trends in Multidisciplinary Academic Research