Temperature effect on gate leakage currents in gate dielectric films of GaAs MOSFET

Jau Yi Wu, Po Wen Sze, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journalArticle

6 Citations (Scopus)


The gate dielectrics of Ga2O3(As2O3) of the GaAs MOSFET were prepared by a low-cost and low-temperature liquid-phase chemically enhanced oxidation method. The temperature and oxide thickness dependence of gate dielectric films on GaAs MOSFET have been investigated. The leakage current and dielectric breakdown field were both studied. Both gate leakage current density and breakdown electrical field were found to depend on the oxide thickness and operating temperature. The increasing trend in gate leakage current and the decreasing trend in breakdown electrical field were observed upon reducing oxide thickness from 30 to 12 nm and increasing operating temperature from -50°C to 200°C.

Original languageEnglish
Pages (from-to)1999-2003
Number of pages5
JournalSolid-State Electronics
Issue number12
Publication statusPublished - 2001 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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