Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors

Po Hsien Lai, Ssu I. Fu, Ching Wen Hung, Yan Ying Tsai, Tzu Pin Chen, Chun Wei Chen, Wen-Chau Liu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Comprehensive studies of temperature-dependent gate-metal-related impact ionization in metamorphic high electron mobility transistors (MHEMTs) are demonstrated. It is known that, from experimental results, the electric field and temperature dependences of impact ionization mechanisms in MHEMT's operation are dominated by the ionization threshold energy and hot electron population. The peak impact ionization-induced gate current could be substantially decreased by the presence of specific gate contact with a higher Schottky barrier height. Therefore, the suppressions of bell-shaped behavior and related impact ionization effect are observed by using the appropriate Schottky gate contacts.

Original languageEnglish
Article number263503
JournalApplied Physics Letters
Volume89
Issue number26
DOIs
Publication statusPublished - 2006 Dec 1

Fingerprint

high electron mobility transistors
temperature effects
ionization
hot electrons
bells
retarding
electron energy
temperature dependence
thresholds
electric fields
metals
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lai, Po Hsien ; Fu, Ssu I. ; Hung, Ching Wen ; Tsai, Yan Ying ; Chen, Tzu Pin ; Chen, Chun Wei ; Liu, Wen-Chau. / Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors. In: Applied Physics Letters. 2006 ; Vol. 89, No. 26.
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Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors. / Lai, Po Hsien; Fu, Ssu I.; Hung, Ching Wen; Tsai, Yan Ying; Chen, Tzu Pin; Chen, Chun Wei; Liu, Wen-Chau.

In: Applied Physics Letters, Vol. 89, No. 26, 263503, 01.12.2006.

Research output: Contribution to journalArticle

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AU - Lai, Po Hsien

AU - Fu, Ssu I.

AU - Hung, Ching Wen

AU - Tsai, Yan Ying

AU - Chen, Tzu Pin

AU - Chen, Chun Wei

AU - Liu, Wen-Chau

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AB - Comprehensive studies of temperature-dependent gate-metal-related impact ionization in metamorphic high electron mobility transistors (MHEMTs) are demonstrated. It is known that, from experimental results, the electric field and temperature dependences of impact ionization mechanisms in MHEMT's operation are dominated by the ionization threshold energy and hot electron population. The peak impact ionization-induced gate current could be substantially decreased by the presence of specific gate contact with a higher Schottky barrier height. Therefore, the suppressions of bell-shaped behavior and related impact ionization effect are observed by using the appropriate Schottky gate contacts.

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