The effect of growth temperature on the formation of uniform self-assembled Ge dots on Si substrates was discussed. It was found that highly uniform Ge dots with height deviation of ±3% were obtained at 600°C. The analysis showed that the discontinuity in characteristic length was in an Arrhenius plot between 600 and 625°C.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)