Temperature effect on the formation of uniform self-assembled Ge dots

G. Jin, J. L. Liu, K. L. Wang

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)

Abstract

The effect of growth temperature on the formation of uniform self-assembled Ge dots on Si substrates was discussed. It was found that highly uniform Ge dots with height deviation of ±3% were obtained at 600°C. The analysis showed that the discontinuity in characteristic length was in an Arrhenius plot between 600 and 625°C.

Original languageEnglish
Pages (from-to)2847-2849
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number14
DOIs
Publication statusPublished - 2003 Oct 6

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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