Temperature effect on the formation of uniform self-assembled Ge dots

G. Jin; J. L. Liu; K. L. Wang

doi:10.1063/1.1616978

Temperature effect on the formation of uniform self-assembled Ge dots

G. Jin, J. L. Liu, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

The effect of growth temperature on the formation of uniform self-assembled Ge dots on Si substrates was discussed. It was found that highly uniform Ge dots with height deviation of ±3% were obtained at 600°C. The analysis showed that the discontinuity in characteristic length was in an Arrhenius plot between 600 and 625°C.

Original language	English
Pages (from-to)	2847-2849
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	14
DOIs	https://doi.org/10.1063/1.1616978
Publication status	Published - 2003 Oct 6

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Temperature effect on the formation of uniform self-assembled Ge dots",

abstract = "The effect of growth temperature on the formation of uniform self-assembled Ge dots on Si substrates was discussed. It was found that highly uniform Ge dots with height deviation of ±3% were obtained at 600°C. The analysis showed that the discontinuity in characteristic length was in an Arrhenius plot between 600 and 625°C.",

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AU - Wang, K. L.

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N2 - The effect of growth temperature on the formation of uniform self-assembled Ge dots on Si substrates was discussed. It was found that highly uniform Ge dots with height deviation of ±3% were obtained at 600°C. The analysis showed that the discontinuity in characteristic length was in an Arrhenius plot between 600 and 625°C.

AB - The effect of growth temperature on the formation of uniform self-assembled Ge dots on Si substrates was discussed. It was found that highly uniform Ge dots with height deviation of ±3% were obtained at 600°C. The analysis showed that the discontinuity in characteristic length was in an Arrhenius plot between 600 and 625°C.

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DO - 10.1063/1.1616978

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Temperature effect on the formation of uniform self-assembled Ge dots

Abstract

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