Temperature effect on the growth of strained GaAs1-ySby/GaAs (y>0.4) quantum wells by MOVPE

Y. K. Su, C. T. Wan, R. W. Chuang, C. Y. Huang, W. C. Chen, Y. S. Wang, H. C. Yu

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

In this article, the GaAsSb/GaAs quantum wells (QWs) grown at different temperatures were studied. The growth rate increases and the Sb composition decreases as the growth temperature increases. The photoluminescence properties of GaAsSb/GaAs QWs were measured at room temperature. The samples grown at higher temperature possess lower photoluminescence intensity and larger full-width at half-maximum (FWHM), which means that the Sb segregation effects become more significant at high growth temperature.

Original languageEnglish
Pages (from-to)4850-4853
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number23
DOIs
Publication statusPublished - 2008 Nov 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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