Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

H. K. Huang, C. S. Wang, Yeong-Her Wang, C. L. Wu, C. S. Chang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The temperature-dependent DC characteristics and noise performance of In0.49Ga0.51P/In0.15Ga0.85As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2 are investigated at 12 GHz with temperature ranging from 300 to 450 K. It is found that the variation of the turn-on voltage for drain-to-gate Schottky diode is -1.05 mV/K and reverse voltages, which are measured at -0.5 mA/mm of gate current is -6 mV/K. The temperature-dependence of pinch-off voltage is -1.01 mV/K and leakage current is 0.043 μA/K. Comparisons of noise performance including minimum noise figure and associated gain between In0.49Ga 0.51P/In0.15Ga0.85As and Al 0.25Ga0.75As/In0.15Ga0.85As low noise PHEMTs are also created. It is found that the high temperature performance of In0.49Ga0.51P/In0.15Ga 0.85As PHEMT is much better than that of Al0.25Ga 0.75As/In0.15Ga0.85As due to the less effects of deep level traps by absence of deep-complex (DX)-center and lower leakage current by higher Schottky barrier and valence band discontinuity.

Original languageEnglish
Pages (from-to)1989-1994
Number of pages6
JournalSolid-State Electronics
Volume47
Issue number11
DOIs
Publication statusPublished - 2003 Nov 1

Fingerprint

High electron mobility transistors
high electron mobility transistors
Thermal effects
low noise
temperature effects
electric potential
leakage
Leakage currents
Electric potential
Schottky diodes
Temperature
discontinuity
Noise figure
Valence bands
direct current
traps
valence
temperature dependence
Diodes
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Huang, H. K. ; Wang, C. S. ; Wang, Yeong-Her ; Wu, C. L. ; Chang, C. S. / Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs. In: Solid-State Electronics. 2003 ; Vol. 47, No. 11. pp. 1989-1994.
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Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs. / Huang, H. K.; Wang, C. S.; Wang, Yeong-Her; Wu, C. L.; Chang, C. S.

In: Solid-State Electronics, Vol. 47, No. 11, 01.11.2003, p. 1989-1994.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

AU - Huang, H. K.

AU - Wang, C. S.

AU - Wang, Yeong-Her

AU - Wu, C. L.

AU - Chang, C. S.

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N2 - The temperature-dependent DC characteristics and noise performance of In0.49Ga0.51P/In0.15Ga0.85As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2 are investigated at 12 GHz with temperature ranging from 300 to 450 K. It is found that the variation of the turn-on voltage for drain-to-gate Schottky diode is -1.05 mV/K and reverse voltages, which are measured at -0.5 mA/mm of gate current is -6 mV/K. The temperature-dependence of pinch-off voltage is -1.01 mV/K and leakage current is 0.043 μA/K. Comparisons of noise performance including minimum noise figure and associated gain between In0.49Ga 0.51P/In0.15Ga0.85As and Al 0.25Ga0.75As/In0.15Ga0.85As low noise PHEMTs are also created. It is found that the high temperature performance of In0.49Ga0.51P/In0.15Ga 0.85As PHEMT is much better than that of Al0.25Ga 0.75As/In0.15Ga0.85As due to the less effects of deep level traps by absence of deep-complex (DX)-center and lower leakage current by higher Schottky barrier and valence band discontinuity.

AB - The temperature-dependent DC characteristics and noise performance of In0.49Ga0.51P/In0.15Ga0.85As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2 are investigated at 12 GHz with temperature ranging from 300 to 450 K. It is found that the variation of the turn-on voltage for drain-to-gate Schottky diode is -1.05 mV/K and reverse voltages, which are measured at -0.5 mA/mm of gate current is -6 mV/K. The temperature-dependence of pinch-off voltage is -1.01 mV/K and leakage current is 0.043 μA/K. Comparisons of noise performance including minimum noise figure and associated gain between In0.49Ga 0.51P/In0.15Ga0.85As and Al 0.25Ga0.75As/In0.15Ga0.85As low noise PHEMTs are also created. It is found that the high temperature performance of In0.49Ga0.51P/In0.15Ga 0.85As PHEMT is much better than that of Al0.25Ga 0.75As/In0.15Ga0.85As due to the less effects of deep level traps by absence of deep-complex (DX)-center and lower leakage current by higher Schottky barrier and valence band discontinuity.

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JF - Solid-State Electronics

SN - 0038-1101

IS - 11

ER -