Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

H. K. Huang; C. S. Wang; Y. H. Wang; C. L. Wu; C. S. Chang

doi:10.1016/S0038-1101(03)00217-X

Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

H. K. Huang, C. S. Wang, Y. H. Wang, C. L. Wu, C. S. Chang

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The temperature-dependent DC characteristics and noise performance of In_0.49Ga_0.51P/In_0.15Ga_0.85As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm² are investigated at 12 GHz with temperature ranging from 300 to 450 K. It is found that the variation of the turn-on voltage for drain-to-gate Schottky diode is -1.05 mV/K and reverse voltages, which are measured at -0.5 mA/mm of gate current is -6 mV/K. The temperature-dependence of pinch-off voltage is -1.01 mV/K and leakage current is 0.043 μA/K. Comparisons of noise performance including minimum noise figure and associated gain between In_0.49Ga _0.51P/In_0.15Ga_0.85As and Al _0.25Ga_0.75As/In_0.15Ga_0.85As low noise PHEMTs are also created. It is found that the high temperature performance of In_0.49Ga_0.51P/In_0.15Ga _0.85As PHEMT is much better than that of Al_0.25Ga _0.75As/In_0.15Ga_0.85As due to the less effects of deep level traps by absence of deep-complex (DX)-center and lower leakage current by higher Schottky barrier and valence band discontinuity.

Original language	English
Pages (from-to)	1989-1994
Number of pages	6
Journal	Solid-State Electronics
Volume	47
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1101(03)00217-X
Publication status	Published - 2003 Nov

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{809344f7301e4b02956b61a782f9b342,

title = "Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs",

abstract = "The temperature-dependent DC characteristics and noise performance of In0.49Ga0.51P/In0.15Ga0.85As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2 are investigated at 12 GHz with temperature ranging from 300 to 450 K. It is found that the variation of the turn-on voltage for drain-to-gate Schottky diode is -1.05 mV/K and reverse voltages, which are measured at -0.5 mA/mm of gate current is -6 mV/K. The temperature-dependence of pinch-off voltage is -1.01 mV/K and leakage current is 0.043 μA/K. Comparisons of noise performance including minimum noise figure and associated gain between In0.49Ga 0.51P/In0.15Ga0.85As and Al 0.25Ga0.75As/In0.15Ga0.85As low noise PHEMTs are also created. It is found that the high temperature performance of In0.49Ga0.51P/In0.15Ga 0.85As PHEMT is much better than that of Al0.25Ga 0.75As/In0.15Ga0.85As due to the less effects of deep level traps by absence of deep-complex (DX)-center and lower leakage current by higher Schottky barrier and valence band discontinuity.",

author = "Huang, {H. K.} and Wang, {C. S.} and Wang, {Y. H.} and Wu, {C. L.} and Chang, {C. S.}",

note = "Funding Information: The work was supported in part by the National Science Council under the contract NSC90-2215-E-006-013 and MOE Program for Promoting Academic Excellent of Universities under the grant number A-91E-FA08-1-4. The Foundation of Chen, Jieh-Chen scholarship, Tainan, Taiwan is also acknowledged for the support during this work. ",

year = "2003",

month = nov,

doi = "10.1016/S0038-1101(03)00217-X",

language = "English",

volume = "47",

pages = "1989--1994",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "11",

}

TY - JOUR

T1 - Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

AU - Huang, H. K.

AU - Wang, C. S.

AU - Wang, Y. H.

AU - Wu, C. L.

AU - Chang, C. S.

N1 - Funding Information: The work was supported in part by the National Science Council under the contract NSC90-2215-E-006-013 and MOE Program for Promoting Academic Excellent of Universities under the grant number A-91E-FA08-1-4. The Foundation of Chen, Jieh-Chen scholarship, Tainan, Taiwan is also acknowledged for the support during this work.

PY - 2003/11

Y1 - 2003/11

N2 - The temperature-dependent DC characteristics and noise performance of In0.49Ga0.51P/In0.15Ga0.85As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2 are investigated at 12 GHz with temperature ranging from 300 to 450 K. It is found that the variation of the turn-on voltage for drain-to-gate Schottky diode is -1.05 mV/K and reverse voltages, which are measured at -0.5 mA/mm of gate current is -6 mV/K. The temperature-dependence of pinch-off voltage is -1.01 mV/K and leakage current is 0.043 μA/K. Comparisons of noise performance including minimum noise figure and associated gain between In0.49Ga 0.51P/In0.15Ga0.85As and Al 0.25Ga0.75As/In0.15Ga0.85As low noise PHEMTs are also created. It is found that the high temperature performance of In0.49Ga0.51P/In0.15Ga 0.85As PHEMT is much better than that of Al0.25Ga 0.75As/In0.15Ga0.85As due to the less effects of deep level traps by absence of deep-complex (DX)-center and lower leakage current by higher Schottky barrier and valence band discontinuity.

AB - The temperature-dependent DC characteristics and noise performance of In0.49Ga0.51P/In0.15Ga0.85As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2 are investigated at 12 GHz with temperature ranging from 300 to 450 K. It is found that the variation of the turn-on voltage for drain-to-gate Schottky diode is -1.05 mV/K and reverse voltages, which are measured at -0.5 mA/mm of gate current is -6 mV/K. The temperature-dependence of pinch-off voltage is -1.01 mV/K and leakage current is 0.043 μA/K. Comparisons of noise performance including minimum noise figure and associated gain between In0.49Ga 0.51P/In0.15Ga0.85As and Al 0.25Ga0.75As/In0.15Ga0.85As low noise PHEMTs are also created. It is found that the high temperature performance of In0.49Ga0.51P/In0.15Ga 0.85As PHEMT is much better than that of Al0.25Ga 0.75As/In0.15Ga0.85As due to the less effects of deep level traps by absence of deep-complex (DX)-center and lower leakage current by higher Schottky barrier and valence band discontinuity.

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U2 - 10.1016/S0038-1101(03)00217-X

DO - 10.1016/S0038-1101(03)00217-X

M3 - Article

AN - SCOPUS:0043231409

VL - 47

SP - 1989

EP - 1994

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 11

ER -