Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

H. K. Huang, C. S. Wang, Y. H. Wang, C. L. Wu, C. S. Chang

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The temperature-dependent DC characteristics and noise performance of In0.49Ga0.51P/In0.15Ga0.85As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2 are investigated at 12 GHz with temperature ranging from 300 to 450 K. It is found that the variation of the turn-on voltage for drain-to-gate Schottky diode is -1.05 mV/K and reverse voltages, which are measured at -0.5 mA/mm of gate current is -6 mV/K. The temperature-dependence of pinch-off voltage is -1.01 mV/K and leakage current is 0.043 μA/K. Comparisons of noise performance including minimum noise figure and associated gain between In0.49Ga 0.51P/In0.15Ga0.85As and Al 0.25Ga0.75As/In0.15Ga0.85As low noise PHEMTs are also created. It is found that the high temperature performance of In0.49Ga0.51P/In0.15Ga 0.85As PHEMT is much better than that of Al0.25Ga 0.75As/In0.15Ga0.85As due to the less effects of deep level traps by absence of deep-complex (DX)-center and lower leakage current by higher Schottky barrier and valence band discontinuity.

Original languageEnglish
Pages (from-to)1989-1994
Number of pages6
JournalSolid-State Electronics
Volume47
Issue number11
DOIs
Publication statusPublished - 2003 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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