Abstract
The temperature-dependent DC characteristics and noise performance of In0.49Ga0.51P/In0.15Ga0.85As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2 are investigated at 12 GHz with temperature ranging from 300 to 450 K. It is found that the variation of the turn-on voltage for drain-to-gate Schottky diode is -1.05 mV/K and reverse voltages, which are measured at -0.5 mA/mm of gate current is -6 mV/K. The temperature-dependence of pinch-off voltage is -1.01 mV/K and leakage current is 0.043 μA/K. Comparisons of noise performance including minimum noise figure and associated gain between In0.49Ga 0.51P/In0.15Ga0.85As and Al 0.25Ga0.75As/In0.15Ga0.85As low noise PHEMTs are also created. It is found that the high temperature performance of In0.49Ga0.51P/In0.15Ga 0.85As PHEMT is much better than that of Al0.25Ga 0.75As/In0.15Ga0.85As due to the less effects of deep level traps by absence of deep-complex (DX)-center and lower leakage current by higher Schottky barrier and valence band discontinuity.
| Original language | English |
|---|---|
| Pages (from-to) | 1989-1994 |
| Number of pages | 6 |
| Journal | Solid-State Electronics |
| Volume | 47 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2003 Nov 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs. / Huang, H. K.; Wang, C. S.; Wang, Yeong-Her; Wu, C. L.; Chang, C. S.
In: Solid-State Electronics, Vol. 47, No. 11, 01.11.2003, p. 1989-1994.Research output: Contribution to journal › Article
TY - JOUR
T1 - Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs
AU - Huang, H. K.
AU - Wang, C. S.
AU - Wang, Yeong-Her
AU - Wu, C. L.
AU - Chang, C. S.
PY - 2003/11/1
Y1 - 2003/11/1
N2 - The temperature-dependent DC characteristics and noise performance of In0.49Ga0.51P/In0.15Ga0.85As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2 are investigated at 12 GHz with temperature ranging from 300 to 450 K. It is found that the variation of the turn-on voltage for drain-to-gate Schottky diode is -1.05 mV/K and reverse voltages, which are measured at -0.5 mA/mm of gate current is -6 mV/K. The temperature-dependence of pinch-off voltage is -1.01 mV/K and leakage current is 0.043 μA/K. Comparisons of noise performance including minimum noise figure and associated gain between In0.49Ga 0.51P/In0.15Ga0.85As and Al 0.25Ga0.75As/In0.15Ga0.85As low noise PHEMTs are also created. It is found that the high temperature performance of In0.49Ga0.51P/In0.15Ga 0.85As PHEMT is much better than that of Al0.25Ga 0.75As/In0.15Ga0.85As due to the less effects of deep level traps by absence of deep-complex (DX)-center and lower leakage current by higher Schottky barrier and valence band discontinuity.
AB - The temperature-dependent DC characteristics and noise performance of In0.49Ga0.51P/In0.15Ga0.85As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2 are investigated at 12 GHz with temperature ranging from 300 to 450 K. It is found that the variation of the turn-on voltage for drain-to-gate Schottky diode is -1.05 mV/K and reverse voltages, which are measured at -0.5 mA/mm of gate current is -6 mV/K. The temperature-dependence of pinch-off voltage is -1.01 mV/K and leakage current is 0.043 μA/K. Comparisons of noise performance including minimum noise figure and associated gain between In0.49Ga 0.51P/In0.15Ga0.85As and Al 0.25Ga0.75As/In0.15Ga0.85As low noise PHEMTs are also created. It is found that the high temperature performance of In0.49Ga0.51P/In0.15Ga 0.85As PHEMT is much better than that of Al0.25Ga 0.75As/In0.15Ga0.85As due to the less effects of deep level traps by absence of deep-complex (DX)-center and lower leakage current by higher Schottky barrier and valence band discontinuity.
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U2 - 10.1016/S0038-1101(03)00217-X
DO - 10.1016/S0038-1101(03)00217-X
M3 - Article
VL - 47
SP - 1989
EP - 1994
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 11
ER -