Temperature effects on nanodiamond dielectric charging for RF MEMS capacitive switches

Changwei Chen, Yon-Hua Tzeng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nanodiamond with dielectric strength greater than 2MV/cm was grown by microwave plasma enhanced chemical vapor deposition and used as a leaky dielectric film for RF MEMS capacitive switches. Nanodiamond films grown by MPECVD were compared with Si3N4 films deposited by RFPECVD by means of transient current measurements. Nanodiamond was characterized by SEM, AFM and Raman spectroscopy for correlation with switch performance. The DC resistivity of nanodiamond was found to be lower than that of Si 3N4 by 3 to 6 orders of magnitude. The discharge time constant of nanodiamond was, therefore, much smaller than that for Si 3N4. Extended DC bias was applied to enhance dielectric charging and demonstrate the superior performance of nanodiamond to that of Si3N4 by showing the much better persistence of capacitance-voltage characteristics of nanodiamond after being subjected to extended DC bias. Superior nanodiamond characteristics were further demonstrated at an elevated temperature at (150°C) and at the dry ice temperature (-79°C).

Original languageEnglish
Title of host publication2010 10th IEEE Conference on Nanotechnology, NANO 2010
Pages619-622
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of
Duration: 2010 Aug 172010 Aug 20

Publication series

Name2010 10th IEEE Conference on Nanotechnology, NANO 2010

Other

Other2010 10th IEEE Conference on Nanotechnology, NANO 2010
CountryKorea, Republic of
CityIlsan, Gyeonggi-Do
Period10-08-1710-08-20

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'Temperature effects on nanodiamond dielectric charging for RF MEMS capacitive switches'. Together they form a unique fingerprint.

  • Cite this

    Chen, C., & Tzeng, Y-H. (2010). Temperature effects on nanodiamond dielectric charging for RF MEMS capacitive switches. In 2010 10th IEEE Conference on Nanotechnology, NANO 2010 (pp. 619-622). [5697798] (2010 10th IEEE Conference on Nanotechnology, NANO 2010). https://doi.org/10.1109/NANO.2010.5697798