Tensile CESL-induced strain dependence on impact ionization efficiency in nMOSFETs

Bo Chin Wang, Ting Kuo Kang, San Lein Wu, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Process-induced strain dependence of impact ionization efficiency (IIE) in nMOSFETs with a tensile contact etch stop layer (CESL) is presented for the first time. From the universal relationship between the IIE and the electric field in the pinch-off region, a difference in the IIE of nMOSFETs between without and with the tensile CESL is found. This result can be mainly attributed to the narrowing effect of the bandgap energy caused by the tensile CESL-induced strain into the channel, i.e., the reduced threshold energy for impact ionization. In addition, the wafer-bending experiments can further provide strong evidence for the bandgap energy narrowing. It means that the IIE measurement could serve as a reliable monitor of the process-induced strain into the channel.

Original languageEnglish
Pages (from-to)610-613
Number of pages4
JournalMicroelectronics Reliability
Issue number5
Publication statusPublished - 2010 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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