Terahertz and infrared spectroscopic study on dielectric properties of Bi2(Zn1/3Nb2/3)2O7 for microwave application

Hsiu Fung Cheng, Yi-Chun Chen, Hsiang Lin Liu, Luu Gen Hwa, I. Nan Lin, Petr Kužel, Jan Petzelt

Research output: Contribution to journalArticle

Abstract

Dielectric properties of Bi 2 (Zn 1/3 NB 2/3 ) 2 O 7 (BiZN) ceramic materials have been studied using terahertz (THz) and Fourier transform infrared (FTIR) spectroscopies. Real part of dielectric constant ( ε1 ) characterized by FTIR spectroscopy is around ( ε1 ) IR ≅ 60 in low frequency regime ( f <100 cm-1 ) and decreases dramatically in the vicinity of lattice vibrational resonance frequencies or wavenumbers, approaching ( ε1 ) IR≅204 in high frequency regimes ( f > 1000 cm-1 ). Real part of dielectric constant ( ε1 ) characterized by THz spectroscopy is a constant value in 0.100.8 THz regime, ( ε1 ) THz≅68, which is essentially the same as the ε1 value obtained by conventional Hakki-Coleman microwave method. These results reveal that there is no lattice vibrational resonance occurring between THz and microwave (or millimeter wave) frequency regimes. Our results indicate that the low frequency dielectric response of BiZN microwave materials is mainly contributed by the ionic polarization.

Original languageEnglish
Pages (from-to)255-260
Number of pages6
JournalFerroelectrics
Volume272
DOIs
Publication statusPublished - 2002 Jan 1

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Dielectric properties
dielectric properties
Microwaves
Infrared radiation
microwaves
Fourier transform infrared spectroscopy
Permittivity
infrared spectroscopy
Terahertz spectroscopy
permittivity
low frequencies
Ceramic materials
Millimeter waves
millimeter waves
ceramics
Polarization
polarization
spectroscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Cheng, Hsiu Fung ; Chen, Yi-Chun ; Liu, Hsiang Lin ; Hwa, Luu Gen ; Lin, I. Nan ; Kužel, Petr ; Petzelt, Jan. / Terahertz and infrared spectroscopic study on dielectric properties of Bi2(Zn1/3Nb2/3)2O7 for microwave application. In: Ferroelectrics. 2002 ; Vol. 272. pp. 255-260.
@article{31806da39a63482ab90c650507cdf682,
title = "Terahertz and infrared spectroscopic study on dielectric properties of Bi2(Zn1/3Nb2/3)2O7 for microwave application",
abstract = "Dielectric properties of Bi 2 (Zn 1/3 NB 2/3 ) 2 O 7 (BiZN) ceramic materials have been studied using terahertz (THz) and Fourier transform infrared (FTIR) spectroscopies. Real part of dielectric constant ( ε1 ) characterized by FTIR spectroscopy is around ( ε1 ) IR ≅ 60 in low frequency regime ( f <100 cm-1 ) and decreases dramatically in the vicinity of lattice vibrational resonance frequencies or wavenumbers, approaching ( ε1 ) IR≅204 in high frequency regimes ( f > 1000 cm-1 ). Real part of dielectric constant ( ε1 ) characterized by THz spectroscopy is a constant value in 0.100.8 THz regime, ( ε1 ) THz≅68, which is essentially the same as the ε1 value obtained by conventional Hakki-Coleman microwave method. These results reveal that there is no lattice vibrational resonance occurring between THz and microwave (or millimeter wave) frequency regimes. Our results indicate that the low frequency dielectric response of BiZN microwave materials is mainly contributed by the ionic polarization.",
author = "Cheng, {Hsiu Fung} and Yi-Chun Chen and Liu, {Hsiang Lin} and Hwa, {Luu Gen} and Lin, {I. Nan} and Petr Kužel and Jan Petzelt",
year = "2002",
month = "1",
day = "1",
doi = "10.1080/713716247",
language = "English",
volume = "272",
pages = "255--260",
journal = "Ferroelectrics",
issn = "0015-0193",
publisher = "Taylor and Francis Ltd.",

}

Terahertz and infrared spectroscopic study on dielectric properties of Bi2(Zn1/3Nb2/3)2O7 for microwave application. / Cheng, Hsiu Fung; Chen, Yi-Chun; Liu, Hsiang Lin; Hwa, Luu Gen; Lin, I. Nan; Kužel, Petr; Petzelt, Jan.

In: Ferroelectrics, Vol. 272, 01.01.2002, p. 255-260.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Terahertz and infrared spectroscopic study on dielectric properties of Bi2(Zn1/3Nb2/3)2O7 for microwave application

AU - Cheng, Hsiu Fung

AU - Chen, Yi-Chun

AU - Liu, Hsiang Lin

AU - Hwa, Luu Gen

AU - Lin, I. Nan

AU - Kužel, Petr

AU - Petzelt, Jan

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Dielectric properties of Bi 2 (Zn 1/3 NB 2/3 ) 2 O 7 (BiZN) ceramic materials have been studied using terahertz (THz) and Fourier transform infrared (FTIR) spectroscopies. Real part of dielectric constant ( ε1 ) characterized by FTIR spectroscopy is around ( ε1 ) IR ≅ 60 in low frequency regime ( f <100 cm-1 ) and decreases dramatically in the vicinity of lattice vibrational resonance frequencies or wavenumbers, approaching ( ε1 ) IR≅204 in high frequency regimes ( f > 1000 cm-1 ). Real part of dielectric constant ( ε1 ) characterized by THz spectroscopy is a constant value in 0.100.8 THz regime, ( ε1 ) THz≅68, which is essentially the same as the ε1 value obtained by conventional Hakki-Coleman microwave method. These results reveal that there is no lattice vibrational resonance occurring between THz and microwave (or millimeter wave) frequency regimes. Our results indicate that the low frequency dielectric response of BiZN microwave materials is mainly contributed by the ionic polarization.

AB - Dielectric properties of Bi 2 (Zn 1/3 NB 2/3 ) 2 O 7 (BiZN) ceramic materials have been studied using terahertz (THz) and Fourier transform infrared (FTIR) spectroscopies. Real part of dielectric constant ( ε1 ) characterized by FTIR spectroscopy is around ( ε1 ) IR ≅ 60 in low frequency regime ( f <100 cm-1 ) and decreases dramatically in the vicinity of lattice vibrational resonance frequencies or wavenumbers, approaching ( ε1 ) IR≅204 in high frequency regimes ( f > 1000 cm-1 ). Real part of dielectric constant ( ε1 ) characterized by THz spectroscopy is a constant value in 0.100.8 THz regime, ( ε1 ) THz≅68, which is essentially the same as the ε1 value obtained by conventional Hakki-Coleman microwave method. These results reveal that there is no lattice vibrational resonance occurring between THz and microwave (or millimeter wave) frequency regimes. Our results indicate that the low frequency dielectric response of BiZN microwave materials is mainly contributed by the ionic polarization.

UR - http://www.scopus.com/inward/record.url?scp=85047699030&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047699030&partnerID=8YFLogxK

U2 - 10.1080/713716247

DO - 10.1080/713716247

M3 - Article

VL - 272

SP - 255

EP - 260

JO - Ferroelectrics

JF - Ferroelectrics

SN - 0015-0193

ER -