Terahertz emission of SiGe/Si quantum wells

M. S. Kagan, I. V. Altukhov, V. P. Sinis, S. G. Thomas, K. L. Wang, K. A. Chao, I. N. Yassievich

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


THz emission of stimulated character was observed in Si/SiGe/Si quantum well (QW) structures doped with boron. The resonance cavity formed by extremely parallel-structure planes due to total internal reflection, is necessary for the emission. The mechanism for the possible population inversion of strain-split acceptor levels is proposed.

Original languageEnglish
Pages (from-to)237-239
Number of pages3
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2000 Dec 22

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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