Terahertz emission of SiGe/Si quantum wells

M. S. Kagan; I. V. Altukhov; V. P. Sinis; S. G. Thomas; K. L. Wang; K. A. Chao; I. N. Yassievich

doi:10.1016/S0040-6090(00)01530-3

Terahertz emission of SiGe/Si quantum wells

M. S. Kagan, I. V. Altukhov, V. P. Sinis, S. G. Thomas, K. L. Wang, K. A. Chao, I. N. Yassievich

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

THz emission of stimulated character was observed in Si/SiGe/Si quantum well (QW) structures doped with boron. The resonance cavity formed by extremely parallel-structure planes due to total internal reflection, is necessary for the emission. The mechanism for the possible population inversion of strain-split acceptor levels is proposed.

Original language	English
Pages (from-to)	237-239
Number of pages	3
Journal	Thin Solid Films
Volume	380
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(00)01530-3
Publication status	Published - 2000 Dec 22

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(00)01530-3

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@article{e127c8281f424e7787b247a1bf57e3a6,

title = "Terahertz emission of SiGe/Si quantum wells",

abstract = "THz emission of stimulated character was observed in Si/SiGe/Si quantum well (QW) structures doped with boron. The resonance cavity formed by extremely parallel-structure planes due to total internal reflection, is necessary for the emission. The mechanism for the possible population inversion of strain-split acceptor levels is proposed.",

author = "Kagan, {M. S.} and Altukhov, {I. V.} and Sinis, {V. P.} and Thomas, {S. G.} and Wang, {K. L.} and Chao, {K. A.} and Yassievich, {I. N.}",

note = "Funding Information: This work was supported in part by Grants 99-02-16169, 00-02-16093, and 00-02-16066 from the Russian Foundation for Basic Research and 97-10-55 from the Russian Ministry of Science and Technology.",

year = "2000",

month = dec,

day = "22",

doi = "10.1016/S0040-6090(00)01530-3",

language = "English",

volume = "380",

pages = "237--239",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

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TY - JOUR

T1 - Terahertz emission of SiGe/Si quantum wells

AU - Kagan, M. S.

AU - Altukhov, I. V.

AU - Sinis, V. P.

AU - Thomas, S. G.

AU - Wang, K. L.

AU - Chao, K. A.

AU - Yassievich, I. N.

N1 - Funding Information: This work was supported in part by Grants 99-02-16169, 00-02-16093, and 00-02-16066 from the Russian Foundation for Basic Research and 97-10-55 from the Russian Ministry of Science and Technology.

PY - 2000/12/22

Y1 - 2000/12/22

N2 - THz emission of stimulated character was observed in Si/SiGe/Si quantum well (QW) structures doped with boron. The resonance cavity formed by extremely parallel-structure planes due to total internal reflection, is necessary for the emission. The mechanism for the possible population inversion of strain-split acceptor levels is proposed.

AB - THz emission of stimulated character was observed in Si/SiGe/Si quantum well (QW) structures doped with boron. The resonance cavity formed by extremely parallel-structure planes due to total internal reflection, is necessary for the emission. The mechanism for the possible population inversion of strain-split acceptor levels is proposed.

UR - http://www.scopus.com/inward/record.url?scp=0034505614&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034505614&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(00)01530-3

DO - 10.1016/S0040-6090(00)01530-3

M3 - Article

AN - SCOPUS:0034505614

SN - 0040-6090

VL - 380

SP - 237

EP - 239

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Terahertz emission of SiGe/Si quantum wells

Abstract

All Science Journal Classification (ASJC) codes

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