Terahertz emission of SiGe/Si quantum wells doped with shallow acceptors

I. V. Altukhov, M. S. Kagan, V. P. Sinis, S. G. Thomas, K. L. Wang, K. A. Chao, A. Blom, M. O. Odnoblyudov, I. N. Yassievich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

THz emission of stimulated character is observed in Si/SiGe/Si quantum well (QW) structures doped with boron. The resonance cavity formed by well parallel QW structure planes owing total internal reflection is necessary for the emission. The model of possible population inversion of strain-split acceptor levels is proposed.

Original languageEnglish
Title of host publicationProceedings of the 8th International Symposium Nanostructures
Subtitle of host publicationPhysics and Technology
EditorsZh. alferov, L. Esaki, ZH. Alferov, L. Esaki
Pages80-83
Number of pages4
Publication statusPublished - 2000
EventProceedings of the 8th International Symposium Nanostructures: Physics and Technology - St. Petersburg, Russian Federation
Duration: 2000 Jun 192000 Jun 23

Publication series

NameProceedings of the 8th International Symposium Nanostructures: Physics and Technology

Conference

ConferenceProceedings of the 8th International Symposium Nanostructures: Physics and Technology
CountryRussian Federation
CitySt. Petersburg
Period00-06-1900-06-23

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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