Terahertz radiation by spontaneous polarization fields in InN

K. I. Lin, J. T. Tsai, J. S. Hwang, M. C. Chen

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Terahertz (THz) radiation is measured from InN excited by femtosecond optical pulses at 790 nm. The InN sample is grown by metalorganic chemical vapor deposition. The InN surface shows typical grain like morphology often observed in N-polar InN. The polarity of the THz radiation field from InN is opposite to that from p-InAs, whose radiation mechanism is dominated by the photo-Dember effect, and is same as that from p-GaAs indicating that the dominant radiation mechanism in InN is the drift current induced by the internal electric field at low-density excitation. In addition, since no azimuthal angle dependence of the THz radiation is observed, the optical rectification effect is ruled out. The lattice constant c=5.7091 for the InN epilayer is determined by θ2θ scan of X-ray diffraction. This implies that the InN epilayer is fully relaxed. Therefore, there is no piezoelectric polarization, and the internal electric field in the InN epilayer results from spontaneous polarization. According to the direction of the spontaneous polarization, the N polarity of the InN sample is confirmed.

Original languageEnglish
Pages (from-to)2669-2672
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume42
Issue number10
DOIs
Publication statusPublished - 2010 Sep 1

Fingerprint

Polarization
Epilayers
Radiation
polarization
radiation
polarity
Electric fields
electric fields
rectification
radiation distribution
metalorganic chemical vapor deposition
Induced currents
Metallorganic chemical vapor deposition
Lattice constants
Laser pulses
X ray diffraction
pulses
diffraction
excitation
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Lin, K. I. ; Tsai, J. T. ; Hwang, J. S. ; Chen, M. C. / Terahertz radiation by spontaneous polarization fields in InN. In: Physica E: Low-Dimensional Systems and Nanostructures. 2010 ; Vol. 42, No. 10. pp. 2669-2672.
@article{2fbd64f6f71b4c29a43452e38b3280e3,
title = "Terahertz radiation by spontaneous polarization fields in InN",
abstract = "Terahertz (THz) radiation is measured from InN excited by femtosecond optical pulses at 790 nm. The InN sample is grown by metalorganic chemical vapor deposition. The InN surface shows typical grain like morphology often observed in N-polar InN. The polarity of the THz radiation field from InN is opposite to that from p-InAs, whose radiation mechanism is dominated by the photo-Dember effect, and is same as that from p-GaAs indicating that the dominant radiation mechanism in InN is the drift current induced by the internal electric field at low-density excitation. In addition, since no azimuthal angle dependence of the THz radiation is observed, the optical rectification effect is ruled out. The lattice constant c=5.7091 for the InN epilayer is determined by θ2θ scan of X-ray diffraction. This implies that the InN epilayer is fully relaxed. Therefore, there is no piezoelectric polarization, and the internal electric field in the InN epilayer results from spontaneous polarization. According to the direction of the spontaneous polarization, the N polarity of the InN sample is confirmed.",
author = "Lin, {K. I.} and Tsai, {J. T.} and Hwang, {J. S.} and Chen, {M. C.}",
year = "2010",
month = "9",
day = "1",
doi = "10.1016/j.physe.2009.12.027",
language = "English",
volume = "42",
pages = "2669--2672",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "10",

}

Terahertz radiation by spontaneous polarization fields in InN. / Lin, K. I.; Tsai, J. T.; Hwang, J. S.; Chen, M. C.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 42, No. 10, 01.09.2010, p. 2669-2672.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Terahertz radiation by spontaneous polarization fields in InN

AU - Lin, K. I.

AU - Tsai, J. T.

AU - Hwang, J. S.

AU - Chen, M. C.

PY - 2010/9/1

Y1 - 2010/9/1

N2 - Terahertz (THz) radiation is measured from InN excited by femtosecond optical pulses at 790 nm. The InN sample is grown by metalorganic chemical vapor deposition. The InN surface shows typical grain like morphology often observed in N-polar InN. The polarity of the THz radiation field from InN is opposite to that from p-InAs, whose radiation mechanism is dominated by the photo-Dember effect, and is same as that from p-GaAs indicating that the dominant radiation mechanism in InN is the drift current induced by the internal electric field at low-density excitation. In addition, since no azimuthal angle dependence of the THz radiation is observed, the optical rectification effect is ruled out. The lattice constant c=5.7091 for the InN epilayer is determined by θ2θ scan of X-ray diffraction. This implies that the InN epilayer is fully relaxed. Therefore, there is no piezoelectric polarization, and the internal electric field in the InN epilayer results from spontaneous polarization. According to the direction of the spontaneous polarization, the N polarity of the InN sample is confirmed.

AB - Terahertz (THz) radiation is measured from InN excited by femtosecond optical pulses at 790 nm. The InN sample is grown by metalorganic chemical vapor deposition. The InN surface shows typical grain like morphology often observed in N-polar InN. The polarity of the THz radiation field from InN is opposite to that from p-InAs, whose radiation mechanism is dominated by the photo-Dember effect, and is same as that from p-GaAs indicating that the dominant radiation mechanism in InN is the drift current induced by the internal electric field at low-density excitation. In addition, since no azimuthal angle dependence of the THz radiation is observed, the optical rectification effect is ruled out. The lattice constant c=5.7091 for the InN epilayer is determined by θ2θ scan of X-ray diffraction. This implies that the InN epilayer is fully relaxed. Therefore, there is no piezoelectric polarization, and the internal electric field in the InN epilayer results from spontaneous polarization. According to the direction of the spontaneous polarization, the N polarity of the InN sample is confirmed.

UR - http://www.scopus.com/inward/record.url?scp=77958002743&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77958002743&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2009.12.027

DO - 10.1016/j.physe.2009.12.027

M3 - Article

AN - SCOPUS:77958002743

VL - 42

SP - 2669

EP - 2672

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 10

ER -