Terahertz radiation from InAlAs and GaAs surface intrinsic-N + structures and the critical electric fields of semiconductors

J. S. Hwang; H. C. Lin; K. I. Lin; X. C. Zhang

doi:10.1063/1.2051788

Terahertz radiation from InAlAs and GaAs surface intrinsic-N ⁺ structures and the critical electric fields of semiconductors

J. S. Hwang, H. C. Lin, K. I. Lin, X. C. Zhang

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Abstract

This study examines terahertz radiation from a series of In0.52 Al0.48 As and GaAs surface-intrinsic- N+ structures (SI N+) with surface-intrinsic layers of various thicknesses. The built-in electric fields in the SI N+ structures are used as the bias. Experimental results indicate that the amplitudes of the THz emission are independent of the built-in electric fields in the emitters when the built-in electric fields exceed the corresponding critical electric fields of the semiconductors. In contrast, the amplitudes of the THz emission are proportional to the thickness of the intrinsic layer and, therefore, the number of photo-excited charged carriers.

Original language	English
Article number	121107
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	12
DOIs	https://doi.org/10.1063/1.2051788
Publication status	Published - 2005 Sept 19

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2051788

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title = "Terahertz radiation from InAlAs and GaAs surface intrinsic-N + structures and the critical electric fields of semiconductors",

abstract = "This study examines terahertz radiation from a series of In0.52 Al0.48 As and GaAs surface-intrinsic- N+ structures (SI N+) with surface-intrinsic layers of various thicknesses. The built-in electric fields in the SI N+ structures are used as the bias. Experimental results indicate that the amplitudes of the THz emission are independent of the built-in electric fields in the emitters when the built-in electric fields exceed the corresponding critical electric fields of the semiconductors. In contrast, the amplitudes of the THz emission are proportional to the thickness of the intrinsic layer and, therefore, the number of photo-excited charged carriers.",

author = "Hwang, {J. S.} and Lin, {H. C.} and Lin, {K. I.} and Zhang, {X. C.}",

note = "Funding Information: The authors would like to thank the National Science Council of Taiwan for financially supporting this research under Contract No. NSC 92-2112-M-006-020. ",

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AU - Hwang, J. S.

AU - Lin, H. C.

AU - Lin, K. I.

AU - Zhang, X. C.

N1 - Funding Information: The authors would like to thank the National Science Council of Taiwan for financially supporting this research under Contract No. NSC 92-2112-M-006-020.

PY - 2005/9/19

Y1 - 2005/9/19

N2 - This study examines terahertz radiation from a series of In0.52 Al0.48 As and GaAs surface-intrinsic- N+ structures (SI N+) with surface-intrinsic layers of various thicknesses. The built-in electric fields in the SI N+ structures are used as the bias. Experimental results indicate that the amplitudes of the THz emission are independent of the built-in electric fields in the emitters when the built-in electric fields exceed the corresponding critical electric fields of the semiconductors. In contrast, the amplitudes of the THz emission are proportional to the thickness of the intrinsic layer and, therefore, the number of photo-excited charged carriers.

AB - This study examines terahertz radiation from a series of In0.52 Al0.48 As and GaAs surface-intrinsic- N+ structures (SI N+) with surface-intrinsic layers of various thicknesses. The built-in electric fields in the SI N+ structures are used as the bias. Experimental results indicate that the amplitudes of the THz emission are independent of the built-in electric fields in the emitters when the built-in electric fields exceed the corresponding critical electric fields of the semiconductors. In contrast, the amplitudes of the THz emission are proportional to the thickness of the intrinsic layer and, therefore, the number of photo-excited charged carriers.

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Terahertz radiation from InAlAs and GaAs surface intrinsic-N ⁺ structures and the critical electric fields of semiconductors

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