Terahertz radiation mechanism of native n-type InN with different carrier concentrations

Jenn Shyong Hwang, Jung Tse Tsai, Kuang I. Lin, Ming Hsun Lee, Chiang Nan Tsai, Hon Way Lin, Shangjr Gwo, Meng Chu Chen

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The polarity and mechanism of terahertz radiation from native n-type InN excited by femtosecond optical pulses are investigated. The optical properties, electron concentrations, and crystalline quality are characterized by photoluminescence and Raman scattering spectra. The electron concentrations are estimated to be between 0:35 × 1019 and 3:87 × 10 19 cm-3. The polarity of terahertz radiation field from the samples with higher electron concentrations is opposite to that from p-InAs, indicating that the dominant radiation mechanism is the drift current. However, the samples with lower electron concentrations show the same polarity as p-InAs. Under this condition, the radiation mechanism is dominated by the photo-Dember effect.

Original languageEnglish
Article number102202
JournalApplied Physics Express
Volume3
Issue number10
DOIs
Publication statusPublished - 2010 Oct 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Terahertz radiation mechanism of native n-type InN with different carrier concentrations'. Together they form a unique fingerprint.

Cite this