Terahertz radiation mechanism of native n-type InN with different carrier concentrations

Jenn Shyong Hwang; Jung Tse Tsai; Kuang I. Lin; Ming Hsun Lee; Chiang Nan Tsai; Hon Way Lin; Shangjr Gwo; Meng Chu Chen

doi:10.1143/APEX.3.102202

Terahertz radiation mechanism of native n-type InN with different carrier concentrations

Jenn Shyong Hwang, Jung Tse Tsai, Kuang I. Lin, Ming Hsun Lee, Chiang Nan Tsai, Hon Way Lin, Shangjr Gwo, Meng Chu Chen

Education and Research Group

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The polarity and mechanism of terahertz radiation from native n-type InN excited by femtosecond optical pulses are investigated. The optical properties, electron concentrations, and crystalline quality are characterized by photoluminescence and Raman scattering spectra. The electron concentrations are estimated to be between 0:35 × 10¹⁹ and 3:87 × 10 ¹⁹ cm^-3. The polarity of terahertz radiation field from the samples with higher electron concentrations is opposite to that from p-InAs, indicating that the dominant radiation mechanism is the drift current. However, the samples with lower electron concentrations show the same polarity as p-InAs. Under this condition, the radiation mechanism is dominated by the photo-Dember effect.

Original language	English
Article number	102202
Journal	Applied Physics Express
Volume	3
Issue number	10
DOIs	https://doi.org/10.1143/APEX.3.102202
Publication status	Published - 2010 Oct 1

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

Access to Document

10.1143/APEX.3.102202

Cite this

@article{38ca635ba05e46b68baf3678be44619a,

title = "Terahertz radiation mechanism of native n-type InN with different carrier concentrations",

abstract = "The polarity and mechanism of terahertz radiation from native n-type InN excited by femtosecond optical pulses are investigated. The optical properties, electron concentrations, and crystalline quality are characterized by photoluminescence and Raman scattering spectra. The electron concentrations are estimated to be between 0:35 × 1019 and 3:87 × 10 19 cm-3. The polarity of terahertz radiation field from the samples with higher electron concentrations is opposite to that from p-InAs, indicating that the dominant radiation mechanism is the drift current. However, the samples with lower electron concentrations show the same polarity as p-InAs. Under this condition, the radiation mechanism is dominated by the photo-Dember effect.",

author = "Hwang, {Jenn Shyong} and Tsai, {Jung Tse} and Lin, {Kuang I.} and Lee, {Ming Hsun} and Tsai, {Chiang Nan} and Lin, {Hon Way} and Shangjr Gwo and Chen, {Meng Chu}",

year = "2010",

month = oct,

day = "1",

doi = "10.1143/APEX.3.102202",

language = "English",

volume = "3",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "10",

}

TY - JOUR

T1 - Terahertz radiation mechanism of native n-type InN with different carrier concentrations

AU - Hwang, Jenn Shyong

AU - Tsai, Jung Tse

AU - Lin, Kuang I.

AU - Lee, Ming Hsun

AU - Tsai, Chiang Nan

AU - Lin, Hon Way

AU - Gwo, Shangjr

AU - Chen, Meng Chu

PY - 2010/10/1

Y1 - 2010/10/1

N2 - The polarity and mechanism of terahertz radiation from native n-type InN excited by femtosecond optical pulses are investigated. The optical properties, electron concentrations, and crystalline quality are characterized by photoluminescence and Raman scattering spectra. The electron concentrations are estimated to be between 0:35 × 1019 and 3:87 × 10 19 cm-3. The polarity of terahertz radiation field from the samples with higher electron concentrations is opposite to that from p-InAs, indicating that the dominant radiation mechanism is the drift current. However, the samples with lower electron concentrations show the same polarity as p-InAs. Under this condition, the radiation mechanism is dominated by the photo-Dember effect.

AB - The polarity and mechanism of terahertz radiation from native n-type InN excited by femtosecond optical pulses are investigated. The optical properties, electron concentrations, and crystalline quality are characterized by photoluminescence and Raman scattering spectra. The electron concentrations are estimated to be between 0:35 × 1019 and 3:87 × 10 19 cm-3. The polarity of terahertz radiation field from the samples with higher electron concentrations is opposite to that from p-InAs, indicating that the dominant radiation mechanism is the drift current. However, the samples with lower electron concentrations show the same polarity as p-InAs. Under this condition, the radiation mechanism is dominated by the photo-Dember effect.

UR - http://www.scopus.com/inward/record.url?scp=78549284269&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78549284269&partnerID=8YFLogxK

U2 - 10.1143/APEX.3.102202

DO - 10.1143/APEX.3.102202

M3 - Article

AN - SCOPUS:78549284269

SN - 1882-0778

VL - 3

JO - Applied Physics Express

JF - Applied Physics Express

IS - 10

M1 - 102202

ER -

Terahertz radiation mechanism of native n-type InN with different carrier concentrations

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this