Testing MRAM for write disturbance fault

Chin Lung Su, Chih Wea Tsai, Cheng Wen Wu, Chien Chung Hung, Young Shying Chen, Ming Jer Kao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Citations (Scopus)

Abstract

The Magnetic Random Access Memory (MRAM) is considered one of the potential candidates that will replace current on-chip memories (RAM, EEPROM, and flash memory) in the future. The MRAM is fast and does not need a high supply voltage for Read/Write operations. It can also endure almost unlimited Read/Write cycles. These combined advantages of RAM and flash memory make it a potential choice for SOC. In this paper, we present the Write Disturbance Fault (WDF) model for MRAM, i.e., a fault that affects the data stored in the MRAM cells due to excessive magnetic field during the Write operation. The proposed WDF model is justified by chip measurement results. We also construct the SPICE macro model for the magnetic tunneling junction (MTJ) device of the toggle MRAM to obtain circuit simulation results. An MRAM chip has been designed and fabricated using a CMOS-based 0.18μm technology. We also present an MRAM fault simulator called RAMSES-M, based on which we derive the shortest test for the proposed WDF model. The test is shown to be better and more robust as compared with March C-. Finally, we present a March 17N diagnosis algorithm for identifying the WDF.

Original languageEnglish
Title of host publication2006 IEEE International Test Conference, ITC
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)1424402921, 9781424402922
DOIs
Publication statusPublished - 2007 Dec 1
Event2006 IEEE International Test Conference, ITC - Santa Clara, CA, United States
Duration: 2006 Oct 222006 Oct 27

Publication series

NameProceedings - International Test Conference
ISSN (Print)1089-3539

Conference

Conference2006 IEEE International Test Conference, ITC
CountryUnited States
CitySanta Clara, CA
Period06-10-2206-10-27

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Applied Mathematics

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