The δ-doped in_0.25ga_0.75as/gaas pseudomorphic high electron mobility transistor structures prepared by low-pressure metal organic chemical vapor deposition

Engineering & Materials Science

• Chemical vapor deposition 75%
• Doping (additives) 72%
• Field effect transistors 23%
• Hall mobility 43%
• High electron mobility transistors 74%
• Low pressure chemical vapor deposition 35%
• Metallorganic chemical vapor deposition 68%
• Metals 41%
• Organic chemicals 100%
• Silanes 27%
• Temperature 8%
• Two dimensional electron gas 37%

Physics & Astronomy

• aluminum gallium arsenides 12%
• caps 13%
• electron gas 12%
• field effect transistors 10%
• high electron mobility transistors 66%
• low pressure 54%
• metalorganic chemical vapor deposition 61%
• performance 5%
• products 8%
• silanes 14%
• spacers 13%