The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs

Meng Chu Chen, Yung Chen Cheng, Chun Yuan Huang, Hsiang Chen Wang, Kuang I. Lin, Zu Po Yang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

First two to five barriers in the growth sequence having silicon (Si) doping of eight periods In0.2Ga0.8N/GaN quantum wells (QWs) on twenty pairs of In0.02Ga0.98N/GaN superlattice strain relief layers (SRLs) of blue LEDs were prepared by low pressure metal-organic chemical vapor deposition (LPMOCVD) system on patterned sapphire substrates (PSSs). The effect of doping layers on the luminescence properties of QWs of blue LEDs was investigated. For the sample with first four barriers having Si doping, formation of soft confinement of QWs potential and strong carrier localization inside QWs were occurred. There is better spread of carriers among eight QWs and strong radiative recombination of carriers inside QWs. The increase of output power and external quantum efficiency (EQE) is due to decrease of Auger processes, leakage of carriers out of QWs, and nonradiative recombination centers. The consequences demonstrate that first four barriers with Si doping possess the favorable doping condition for eight periods In0.2Ga0.8N/GaN QWs.

Original languageEnglish
Pages (from-to)59-64
Number of pages6
JournalJournal of Luminescence
Volume177
DOIs
Publication statusPublished - 2016 Sep 1

Fingerprint

Silicon
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
Doping (additives)
quantum wells
Genetic Recombination
silicon
Organic Chemicals
Aluminum Oxide
Luminescence
Metals
Pressure
Growth
radiative recombination
Quantum efficiency
metalorganic chemical vapor deposition
quantum efficiency
Chemical vapor deposition
sapphire

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Chen, Meng Chu ; Cheng, Yung Chen ; Huang, Chun Yuan ; Wang, Hsiang Chen ; Lin, Kuang I. ; Yang, Zu Po. / The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs. In: Journal of Luminescence. 2016 ; Vol. 177. pp. 59-64.
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The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs. / Chen, Meng Chu; Cheng, Yung Chen; Huang, Chun Yuan; Wang, Hsiang Chen; Lin, Kuang I.; Yang, Zu Po.

In: Journal of Luminescence, Vol. 177, 01.09.2016, p. 59-64.

Research output: Contribution to journalArticle

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AU - Lin, Kuang I.

AU - Yang, Zu Po

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