The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer

Shao Yu Chiu, Ying Lang Wang, Chuan Pu Liu, Jin Kun Lan, Chyung Ay, Ming Shiann Feng, Ming Shih Tsai, Bau Tong Dai

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

In situ electrochemical measurements were performed for Al and Ti disks in various slurries during polishing and static conditions. The electrochemical results obtained from the corrosion potential drop of Al polishing have verified that the maximum removal rate of metal CMP can be achieved when the removal rate of the surface oxide was equal to its growth rate. However, Ti polishing did not exist maximum removal rate. The effects of H2O 2%, pH values and pressure on the Al and Ti polishing behaviors were explored by using potentiodynamic scan. The corrosion potential drop was found to be a good index for polishing removal rate. The corrosion potential drop changed with increasing H2O2% for Al polishing and there existed a maximum value. But the corrosion potential drop increased with increasing H2O2% for Ti polishing. The pH value had different effects on Al and Ti polishing. Higher pH values gave higher Al removal rate but lower Ti removal rate. The Al polishing showed more pressure sensitive than Ti polishing did. The galvanic current was measured for Al/Ti polishing. For slurry with 6vol.% H2O2 and pH = 4, the abraded Al electrode obtained a negative current, which implied Ti oxidation was enhanced.

Original languageEnglish
Pages (from-to)444-451
Number of pages8
JournalMaterials Chemistry and Physics
Volume82
Issue number2
DOIs
Publication statusPublished - 2003 Nov 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer'. Together they form a unique fingerprint.

Cite this