The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region

S. H. Guol, M. L. Lee, C. S. Lin, J. K. Sheu, Y. S. Wu, C. K. Sun, C. H. Kuo, C. J. Tun, J. W. Shi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al0.2Ga0.8N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.

Original languageEnglish
Title of host publication2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
PublisherIEEE Computer Society
ISBN (Print)9781557528698
DOIs
Publication statusPublished - 2009
Event2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States
Duration: 2009 Jun 22009 Jun 4

Publication series

Name2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Other

Other2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
CountryUnited States
CityBaltimore, MD
Period09-06-0209-06-04

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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