The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region

S. H. Guo; M. L. Lee; C. S. Lin; J. K. Sheu; Y. S. Wu; C. K. Sun; C. H. Kuo; C. J. Tun; J. W. Shi

The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region

S. H. Guo, M. L. Lee, C. S. Lin, J. K. Sheu, Y. S. Wu, C. K. Sun, C. H. Kuo, C. J. Tun, J. W. Shi

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al_0.2Ga_0.8N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2009
Publication status	Published - 2009
Event	Conference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States Duration: 2009 May 31 → 2009 Jun 5

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2009
Country/Territory	United States
City	Baltimore, MD
Period	09-05-31 → 09-06-05

All Science Journal Classification (ASJC) codes

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

@inproceedings{045d1fffade44920bf9229223979e3cf,

title = "The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region",

abstract = "We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al0.2Ga0.8N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.",

author = "Guo, {S. H.} and Lee, {M. L.} and Lin, {C. S.} and Sheu, {J. K.} and Wu, {Y. S.} and Sun, {C. K.} and Kuo, {C. H.} and Tun, {C. J.} and Shi, {J. W.}",

year = "2009",

language = "English",

isbn = "9781557528698",

series = "Optics InfoBase Conference Papers",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2009",

}

Guo, SH, Lee, ML, Lin, CS, Sheu, JK, Wu, YS, Sun, CK, Kuo, CH, Tun, CJ & Shi, JW 2009, The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region. in Conference on Lasers and Electro-Optics, CLEO 2009. Optics InfoBase Conference Papers, Conference on Lasers and Electro-Optics, CLEO 2009, Baltimore, MD, United States, 09-05-31.

The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region. / Guo, S. H.; Lee, M. L.; Lin, C. S. et al.
Conference on Lasers and Electro-Optics, CLEO 2009. 2009. (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region

AU - Guo, S. H.

AU - Lee, M. L.

AU - Lin, C. S.

AU - Sheu, J. K.

AU - Wu, Y. S.

AU - Sun, C. K.

AU - Kuo, C. H.

AU - Tun, C. J.

AU - Shi, J. W.

PY - 2009

Y1 - 2009

N2 - We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al0.2Ga0.8N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.

AB - We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al0.2Ga0.8N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.

UR - http://www.scopus.com/inward/record.url?scp=84894035555&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894035555&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84894035555

SN - 9781557528698

T3 - Optics InfoBase Conference Papers

BT - Conference on Lasers and Electro-Optics, CLEO 2009

T2 - Conference on Lasers and Electro-Optics, CLEO 2009

Y2 - 31 May 2009 through 5 June 2009

ER -

The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region

Abstract

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All Science Journal Classification (ASJC) codes

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