The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region

S. H. Guo, M. L. Lee, C. S. Lin, J. K. Sheu, Y. S. Wu, C. K. Sun, C. H. Kuo, C. J. Tun, J. W. Shi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al0.2Ga0.8N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2009
Publication statusPublished - 2009
EventConference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States
Duration: 2009 May 312009 Jun 5

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics, CLEO 2009
CountryUnited States
CityBaltimore, MD
Period09-05-3109-06-05

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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