The bias-crystallization mechanism on structural characteristics and electrical properties of Zn-In-Sn-O film

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The Zn-In-Sn-O (ZITO) transparent conductive oxide (TCO) films were deposited onto indium/glass substrate by co-sputtering system. The bias-crystallization mechanism (BCM) was used to promote the quality of ZITO films. After biasing treatment (biased at 4V for 20 min), the resistivity of ZITO film reduced from 3.08 × 10-4 Ω*cm to 6:3 × 10-5 Ω*cm. This reduction was attributed to the indium ions diffused into ZITO film using BCM. According to the Joule's law and Ohm's law, the required energy of biasing treatment was only 480 Joule. Comparing with traditional annealed treatment (annealing at 500°C for 20 min in vacuum required 9:8 × 106 Joule), BCM had improved the conductivity of ZITO film in a short time at room temperature and possessed an excellent competitiveness of cost.

Original languageEnglish
Pages (from-to)1560-1564
Number of pages5
JournalMaterials Transactions
Volume52
Issue number8
DOIs
Publication statusPublished - 2011 Nov 11

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'The bias-crystallization mechanism on structural characteristics and electrical properties of Zn-In-Sn-O film'. Together they form a unique fingerprint.

  • Cite this