The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures

M. H. Liu; Y. H. Wang; M. P. Houng; J. F. Chen; A. Y. Cho

doi:10.1109/EDMS.1994.771157

The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures

M. H. Liu, Y. H. Wang, M. P. Houng, J. F. Chen, A. Y. Cho

Research output: Contribution to conference › Paper › peer-review

Abstract

The negative differential resistance (NDR) characteristics of GaSb/AlSb/GaSb/AlSb/InAs doublebarrier structure were improved by incorporating an InAs blocking layer into the well region, i.e. GaSb/AlSb/InAs/GaSb/AlSb/InAs structure. The multiple NDR behaviors as well as high peak-to-valley ratios (PVRs) were observed with appropriate InAs well width. The three-band model was used to investigate the effect of the InAs well on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.771157
Publication status	Published - 1994
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 1994 Jul 12 → 1994 Jul 15

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan
City	Hsinchu
Period	94-07-12 → 94-07-15

All Science Journal Classification (ASJC) codes

Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDMS.1994.771157

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title = "The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures",

abstract = "The negative differential resistance (NDR) characteristics of GaSb/AlSb/GaSb/AlSb/InAs doublebarrier structure were improved by incorporating an InAs blocking layer into the well region, i.e. GaSb/AlSb/InAs/GaSb/AlSb/InAs structure. The multiple NDR behaviors as well as high peak-to-valley ratios (PVRs) were observed with appropriate InAs well width. The three-band model was used to investigate the effect of the InAs well on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.",

author = "Liu, {M. H.} and Wang, {Y. H.} and Houng, {M. P.} and Chen, {J. F.} and Cho, {A. Y.}",

note = "Funding Information: This work was partially supported by the National Science Council of the Republic of China under contracts and NSC-81-0404-E006-612. Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771157",

language = "English",

}

TY - CONF

T1 - The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures

AU - Liu, M. H.

AU - Wang, Y. H.

AU - Houng, M. P.

AU - Chen, J. F.

AU - Cho, A. Y.

PY - 1994

Y1 - 1994

N2 - The negative differential resistance (NDR) characteristics of GaSb/AlSb/GaSb/AlSb/InAs doublebarrier structure were improved by incorporating an InAs blocking layer into the well region, i.e. GaSb/AlSb/InAs/GaSb/AlSb/InAs structure. The multiple NDR behaviors as well as high peak-to-valley ratios (PVRs) were observed with appropriate InAs well width. The three-band model was used to investigate the effect of the InAs well on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.

AB - The negative differential resistance (NDR) characteristics of GaSb/AlSb/GaSb/AlSb/InAs doublebarrier structure were improved by incorporating an InAs blocking layer into the well region, i.e. GaSb/AlSb/InAs/GaSb/AlSb/InAs structure. The multiple NDR behaviors as well as high peak-to-valley ratios (PVRs) were observed with appropriate InAs well width. The three-band model was used to investigate the effect of the InAs well on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.

UR - http://www.scopus.com/inward/record.url?scp=85063596655&partnerID=8YFLogxK

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U2 - 10.1109/EDMS.1994.771157

DO - 10.1109/EDMS.1994.771157

M3 - Paper

AN - SCOPUS:85063596655

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -

The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures

Abstract

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