Abstract
The negative differential resistance (NDR) characteristics of GaSb/AlSb/GaSb/AlSb/InAs doublebarrier structure were improved by incorporating an InAs blocking layer into the well region, i.e. GaSb/AlSb/InAs/GaSb/AlSb/InAs structure. The multiple NDR behaviors as well as high peak-to-valley ratios (PVRs) were observed with appropriate InAs well width. The three-band model was used to investigate the effect of the InAs well on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.
Original language | English |
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DOIs | |
Publication status | Published - 1994 |
Event | 1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 1994 Jul 12 → 1994 Jul 15 |
Conference
Conference | 1994 International Electron Devices and Materials Symposium, EDMS 1994 |
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Country/Territory | Taiwan |
City | Hsinchu |
Period | 94-07-12 → 94-07-15 |
All Science Journal Classification (ASJC) codes
- Industrial and Manufacturing Engineering
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering