The characteristics of aluminum-gallium-zinc-oxide ultraviolet phototransistors by co-sputtering method

Wei Lun Huang, Sheng Po Chang, Cheng Hao Li, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

Abstract

In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.

Original languageEnglish
Article number631
Pages (from-to)1-10
Number of pages10
JournalElectronics (Switzerland)
Volume10
Issue number5
DOIs
Publication statusPublished - 2021 Mar 1

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Signal Processing
  • Hardware and Architecture
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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