The characteristics of photo-CVD SiO2 and its application on SiC MIS UV photodetectors

C. H. Liu, C. S. Chang, S. J. Chang, Y. K. Su, Y. Z. Chiou, S. H. Liu, B. R. Huang

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7 Citations (Scopus)

Abstract

SiO2 layers were deposited onto SiC by photo-chemical vapor deposition (photo-CVD) using deuterium (D2) lamp as the excitation source. For the photo-SiO2 deposited 500 °C, interface state density (Dit) was estimated to be 5.66 × 1011 cm-2 eV-1. With an applied electric field of 4 MV cm-1, it was found that the leakage current was only 3.15 × 10-8 A cm-2 for the photo-CVD SiO2 layer prepared at 500 °C. It was also found that photo-SiO2 could effectively suppress dark current of SiC-based photodetectors (PDs). It was found that we could reduce dark current of SiC-based PDs by about three orders of magnitude by the insertion of a 5 nm-thick photo-CVD SiO2 film in between Indium-tin-oxide (ITO) contact and the underneath SiC. Photocurrent to dark current ratio of ITO/SiO2/SiC MIS PDs was also found to be much larger than that of conventional ITO/SiC Schottky barrier PDs.

Original languageEnglish
Pages (from-to)142-146
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume100
Issue number2
DOIs
Publication statusPublished - 2003 Jul 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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