Abstract
We prepared InGaN/GaN multiquantum wells (MQWs) with InGaN/GaN strained layer superlattice (SLS) underlayer and with GaN/AlGaN SLS underlayer to create different Vshaped pits. It was found that pit density became smaller while pit depth and pit diameter both became larger, as compared to the sample without SLS. It was also found that sample surface became rougher with the SLS. Furthermore, it was found that light output intensities observed from the samples with SLS were stronger.
Original language | English |
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Pages (from-to) | 1639-1641 |
Number of pages | 3 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 5 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2008 |
Event | 7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: 2007 Sept 16 → 2007 Sept 21 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics