The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers

W. C. Lai; Y. S. Huang; Y. W. Yen; J. K. Sheu; T. H. Hsueh; C. H. Kuo; S. J. Chang

doi:10.1002/pssc.200778559

The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers

W. C. Lai, Y. S. Huang, Y. W. Yen, J. K. Sheu, T. H. Hsueh, C. H. Kuo, S. J. Chang

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

We prepared InGaN/GaN multiquantum wells (MQWs) with InGaN/GaN strained layer superlattice (SLS) underlayer and with GaN/AlGaN SLS underlayer to create different Vshaped pits. It was found that pit density became smaller while pit depth and pit diameter both became larger, as compared to the sample without SLS. It was also found that sample surface became rougher with the SLS. Furthermore, it was found that light output intensities observed from the samples with SLS were stronger.

Original language	English
Pages (from-to)	1639-1641
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	6
DOIs	https://doi.org/10.1002/pssc.200778559
Publication status	Published - 2008
Event	7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: 2007 Sep 16 → 2007 Sep 21

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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title = "The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers",

abstract = "We prepared InGaN/GaN multiquantum wells (MQWs) with InGaN/GaN strained layer superlattice (SLS) underlayer and with GaN/AlGaN SLS underlayer to create different Vshaped pits. It was found that pit density became smaller while pit depth and pit diameter both became larger, as compared to the sample without SLS. It was also found that sample surface became rougher with the SLS. Furthermore, it was found that light output intensities observed from the samples with SLS were stronger.",

author = "Lai, {W. C.} and Huang, {Y. S.} and Yen, {Y. W.} and Sheu, {J. K.} and Hsueh, {T. H.} and Kuo, {C. H.} and Chang, {S. J.}",

year = "2008",

doi = "10.1002/pssc.200778559",

language = "English",

volume = "5",

pages = "1639--1641",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "6",

}

The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers. / Lai, W. C.; Huang, Y. S.; Yen, Y. W.; Sheu, J. K.; Hsueh, T. H.; Kuo, C. H.; Chang, S. J.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 6, 2008, p. 1639-1641.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers

AU - Lai, W. C.

AU - Huang, Y. S.

AU - Yen, Y. W.

AU - Sheu, J. K.

AU - Hsueh, T. H.

AU - Kuo, C. H.

AU - Chang, S. J.

PY - 2008

Y1 - 2008

N2 - We prepared InGaN/GaN multiquantum wells (MQWs) with InGaN/GaN strained layer superlattice (SLS) underlayer and with GaN/AlGaN SLS underlayer to create different Vshaped pits. It was found that pit density became smaller while pit depth and pit diameter both became larger, as compared to the sample without SLS. It was also found that sample surface became rougher with the SLS. Furthermore, it was found that light output intensities observed from the samples with SLS were stronger.

AB - We prepared InGaN/GaN multiquantum wells (MQWs) with InGaN/GaN strained layer superlattice (SLS) underlayer and with GaN/AlGaN SLS underlayer to create different Vshaped pits. It was found that pit density became smaller while pit depth and pit diameter both became larger, as compared to the sample without SLS. It was also found that sample surface became rougher with the SLS. Furthermore, it was found that light output intensities observed from the samples with SLS were stronger.

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DO - 10.1002/pssc.200778559

M3 - Conference article

AN - SCOPUS:67649147086

VL - 5

SP - 1639

EP - 1641

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 6

T2 - 7th International Conference of Nitride Semiconductors, ICNS-7

Y2 - 16 September 2007 through 21 September 2007

ER -

The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers

Abstract

All Science Journal Classification (ASJC) codes

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