The comprehensive characteristics of quaternary AlInGaN with various TMI molar rate

Sheng Fu Yu, Shoou Jinn Chang, Sheng Po Chang, Ray Ming Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We demonstrated very thick (∼400 nm) AlInGaN quaternary alloy grown on GaN epilayer by MOCVD. The Optical, electronic, crystalline quality and surface morphology of AlInGaN/GaN hetero structures with various TMI molar flow rate were be extensively discussed. With Al0.89In0.02GaN/GaN fully lattice matched structure, less and small V-defect pits and good crystal quality comparing with the other lattice mismatched AlInGaN/GaN hetero-structures were discovered. Finally, the difference AlInGaN quaternary epilayers could be directly applied to high power LED structure in the future by the same barrier growth conditions.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices V
Publication statusPublished - 2010
EventGallium Nitride Materials and Devices V - San Francisco, CA, United States
Duration: 2010 Jan 252010 Jan 28

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherGallium Nitride Materials and Devices V
Country/TerritoryUnited States
CitySan Francisco, CA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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