The comprehensive study of liquid phase oxidation on GaAs-based transistor applications

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The GaAs-based HEMTs with gate oxide and HBTs with surface passivation prepared by liquid phase oxidation (LPO) will be demonstrated. As compared to the Schottky-gate HEMTs, the lower gate leakage currents, higher breakdown voltages, and improved RF performances make the proposed technique suitable for high-power and high-speed applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.

Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages1082-1085
Number of pages4
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: 2008 Oct 202008 Oct 23

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period08-10-2008-10-23

Fingerprint

Heterojunction bipolar transistors
High electron mobility transistors
Electric breakdown
Passivation
Oxides
high current
Transistors
liquid phases
transistors
high electron mobility transistors
Gates (transistor)
electrical faults
Oxidation
oxidation
passivity
Liquids
Leakage currents
oxides
leakage
high speed

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Wang, Y-H. (2008). The comprehensive study of liquid phase oxidation on GaAs-based transistor applications. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 1082-1085). [4734739] (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734739
Wang, Yeong-Her. / The comprehensive study of liquid phase oxidation on GaAs-based transistor applications. ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. pp. 1082-1085 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).
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Wang, Y-H 2008, The comprehensive study of liquid phase oxidation on GaAs-based transistor applications. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734739, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, pp. 1082-1085, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 08-10-20. https://doi.org/10.1109/ICSICT.2008.4734739

The comprehensive study of liquid phase oxidation on GaAs-based transistor applications. / Wang, Yeong-Her.

ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 1082-1085 4734739 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Wang Y-H. The comprehensive study of liquid phase oxidation on GaAs-based transistor applications. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 1082-1085. 4734739. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734739