TY - GEN
T1 - The comprehensive study of liquid phase oxidation on GaAs-based transistor applications
AU - Wang, Yeong Her
PY - 2008
Y1 - 2008
N2 - The GaAs-based HEMTs with gate oxide and HBTs with surface passivation prepared by liquid phase oxidation (LPO) will be demonstrated. As compared to the Schottky-gate HEMTs, the lower gate leakage currents, higher breakdown voltages, and improved RF performances make the proposed technique suitable for high-power and high-speed applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.
AB - The GaAs-based HEMTs with gate oxide and HBTs with surface passivation prepared by liquid phase oxidation (LPO) will be demonstrated. As compared to the Schottky-gate HEMTs, the lower gate leakage currents, higher breakdown voltages, and improved RF performances make the proposed technique suitable for high-power and high-speed applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.
UR - http://www.scopus.com/inward/record.url?scp=60649092965&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=60649092965&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2008.4734739
DO - 10.1109/ICSICT.2008.4734739
M3 - Conference contribution
AN - SCOPUS:60649092965
SN - 9781424421855
T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
SP - 1082
EP - 1085
BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Y2 - 20 October 2008 through 23 October 2008
ER -