Abstract
The present article investigated the performance and interfacial behavior between Cu wire bond and Al pad under molding compounds of different chlorine contents. The epoxy molding compounds (EMCs) were categorized as ultra-high chlorine, high chlorine and low chlorine, respectively, with 24, 7.6, and 4.3 ppm chlorine contents. The ball bonds were stressed under 130°C/85%RH with biased voltage of 10V. The interfacial evolution between Cu wire bond and Al pad was investigated in EMC of three chlorine contents after the biased-HAST test. The Cu bonding wires used in the plastic ball grid array (PBGA) package include bare Cu wire (4N Cu) and Pd coated Cu alloy wire (98Cu2Pd). The as bonded wire bond exhibits an average Cu-Al DV1C thickness of ∼0.12 um in both types of Cu wire. Two Cu-Al IMC layers, Cu9Al4 and CuAl2, analyzed by EDX were formed after 100h of biased-HAST test. The joint failed in 192h and 1296h, respectively, under ultra-high and high chlorine content EMC. The joint lasts longer than 2000h with low chlorine content EMC. The corrosion of IMC formed between Cu wire and Al pad, occurs in the ultra-high and high chlorine molding compound. The results of EDX analysis indicate that the chlorine ion diffuses from molding compound to DVIC through the crack formed between IMC and Al pad. Al2O3 was formed within the DVIC layer. It is believed the existence of Al2O3 accelerates the penetration of the chlorine ion and thus the corrosion.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - Electronic Components and Technology Conference |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 419-424 |
| Number of pages | 6 |
| ISBN (Electronic) | 9781479924073 |
| DOIs | |
| Publication status | Published - 2014 Sep 11 |
| Event | 64th Electronic Components and Technology Conference, ECTC 2014 - Orlando, United States Duration: 2014 May 27 → 2014 May 30 |
Publication series
| Name | Proceedings - Electronic Components and Technology Conference |
|---|---|
| ISSN (Print) | 0569-5503 |
Other
| Other | 64th Electronic Components and Technology Conference, ECTC 2014 |
|---|---|
| Country | United States |
| City | Orlando |
| Period | 14-05-27 → 14-05-30 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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The corrosion performance of Cu alloy wire bond on Al pad in molding compounds of various chlorine contents under biased-HAST. / Chiu, Ying Ta; Chiang, Tzu Hsing; Chen, Yin Fa; Yang, Ping Feng; Huang, Louie; Lin, Kwang-Lung.
Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 419-424 6897319 (Proceedings - Electronic Components and Technology Conference).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - The corrosion performance of Cu alloy wire bond on Al pad in molding compounds of various chlorine contents under biased-HAST
AU - Chiu, Ying Ta
AU - Chiang, Tzu Hsing
AU - Chen, Yin Fa
AU - Yang, Ping Feng
AU - Huang, Louie
AU - Lin, Kwang-Lung
PY - 2014/9/11
Y1 - 2014/9/11
N2 - The present article investigated the performance and interfacial behavior between Cu wire bond and Al pad under molding compounds of different chlorine contents. The epoxy molding compounds (EMCs) were categorized as ultra-high chlorine, high chlorine and low chlorine, respectively, with 24, 7.6, and 4.3 ppm chlorine contents. The ball bonds were stressed under 130°C/85%RH with biased voltage of 10V. The interfacial evolution between Cu wire bond and Al pad was investigated in EMC of three chlorine contents after the biased-HAST test. The Cu bonding wires used in the plastic ball grid array (PBGA) package include bare Cu wire (4N Cu) and Pd coated Cu alloy wire (98Cu2Pd). The as bonded wire bond exhibits an average Cu-Al DV1C thickness of ∼0.12 um in both types of Cu wire. Two Cu-Al IMC layers, Cu9Al4 and CuAl2, analyzed by EDX were formed after 100h of biased-HAST test. The joint failed in 192h and 1296h, respectively, under ultra-high and high chlorine content EMC. The joint lasts longer than 2000h with low chlorine content EMC. The corrosion of IMC formed between Cu wire and Al pad, occurs in the ultra-high and high chlorine molding compound. The results of EDX analysis indicate that the chlorine ion diffuses from molding compound to DVIC through the crack formed between IMC and Al pad. Al2O3 was formed within the DVIC layer. It is believed the existence of Al2O3 accelerates the penetration of the chlorine ion and thus the corrosion.
AB - The present article investigated the performance and interfacial behavior between Cu wire bond and Al pad under molding compounds of different chlorine contents. The epoxy molding compounds (EMCs) were categorized as ultra-high chlorine, high chlorine and low chlorine, respectively, with 24, 7.6, and 4.3 ppm chlorine contents. The ball bonds were stressed under 130°C/85%RH with biased voltage of 10V. The interfacial evolution between Cu wire bond and Al pad was investigated in EMC of three chlorine contents after the biased-HAST test. The Cu bonding wires used in the plastic ball grid array (PBGA) package include bare Cu wire (4N Cu) and Pd coated Cu alloy wire (98Cu2Pd). The as bonded wire bond exhibits an average Cu-Al DV1C thickness of ∼0.12 um in both types of Cu wire. Two Cu-Al IMC layers, Cu9Al4 and CuAl2, analyzed by EDX were formed after 100h of biased-HAST test. The joint failed in 192h and 1296h, respectively, under ultra-high and high chlorine content EMC. The joint lasts longer than 2000h with low chlorine content EMC. The corrosion of IMC formed between Cu wire and Al pad, occurs in the ultra-high and high chlorine molding compound. The results of EDX analysis indicate that the chlorine ion diffuses from molding compound to DVIC through the crack formed between IMC and Al pad. Al2O3 was formed within the DVIC layer. It is believed the existence of Al2O3 accelerates the penetration of the chlorine ion and thus the corrosion.
UR - http://www.scopus.com/inward/record.url?scp=84907888788&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84907888788&partnerID=8YFLogxK
U2 - 10.1109/ECTC.2014.6897319
DO - 10.1109/ECTC.2014.6897319
M3 - Conference contribution
AN - SCOPUS:84907888788
T3 - Proceedings - Electronic Components and Technology Conference
SP - 419
EP - 424
BT - Proceedings - Electronic Components and Technology Conference
PB - Institute of Electrical and Electronics Engineers Inc.
ER -