The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System

Ze Hui Chen; Cheng Ying Li; Sheng Yuan Chu; Cheng Che Tsai; Yi Hsun Wang; Hsueh Yu Kao; Chia Ling Wei; Yen Hsiang Huang; Po Yu Hsiao; Yun Hui Liu

doi:10.1109/TED.2020.3019230

The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System

Ze Hui Chen, Cheng Ying Li, Sheng Yuan Chu, Cheng Che Tsai, Yi Hsun Wang, Hsueh Yu Kao, Chia Ling Wei, Yen Hsiang Huang, Po Yu Hsiao, Yun Hui Liu

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this study, we successfully deposited ${c}$ -axis-oriented aluminum nitride piezoelectric films via low-temperature dc sputtering method. Based on the X-ray diffraction (XRD) and TEM analyses, deposited films with a ${c}$ -axis monocrystal were identified. The effective ${d}_{{33},{f}}$ value of the aluminum nitride (AlN) films is 5.92 pC/N, which is better than most of the reported data using dc sputtering processing. Using ANSYS software, we simulated and designed MEMS accelerometers based on AlN films. Furthermore, we successfully fabricated MEMS accelerometers. The sensitivity of the MEMS accelerometer is 1.49 mV/g, and the resonance frequency is 7.2 kHz. The MEMS accelerometer was combined with a sensing circuit constituting a module. The sensitivity of the module increases approximately tenfold. Finally, the vibration of spindles was successfully detected using the designed module.

Original language	English
Article number	9187544
Pages (from-to)	4399-4404
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	10
DOIs	https://doi.org/10.1109/TED.2020.3019230
Publication status	Published - 2020 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2020.3019230

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@article{caf5749e069545be898b15a62def1973,

title = "The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System",

abstract = "In this study, we successfully deposited ${c}$ -axis-oriented aluminum nitride piezoelectric films via low-temperature dc sputtering method. Based on the X-ray diffraction (XRD) and TEM analyses, deposited films with a ${c}$ -axis monocrystal were identified. The effective ${d}_{{33},{f}}$ value of the aluminum nitride (AlN) films is 5.92 pC/N, which is better than most of the reported data using dc sputtering processing. Using ANSYS software, we simulated and designed MEMS accelerometers based on AlN films. Furthermore, we successfully fabricated MEMS accelerometers. The sensitivity of the MEMS accelerometer is 1.49 mV/g, and the resonance frequency is 7.2 kHz. The MEMS accelerometer was combined with a sensing circuit constituting a module. The sensitivity of the module increases approximately tenfold. Finally, the vibration of spindles was successfully detected using the designed module.",

author = "Chen, {Ze Hui} and Li, {Cheng Ying} and Chu, {Sheng Yuan} and Tsai, {Cheng Che} and Wang, {Yi Hsun} and Kao, {Hsueh Yu} and Wei, {Chia Ling} and Huang, {Yen Hsiang} and Hsiao, {Po Yu} and Liu, {Yun Hui}",

note = "Funding Information: Manuscript received July 8, 2020; revised August 11, 2020; accepted August 13, 2020. Date of publication September 7, 2020; date of current version September 22, 2020. This work was supported by the Ministry of Science and Technology, Taiwan, under Grant MOST 109-2218-E-006 -027. The review of this article was arranged by Editor F. Ayazi. (Corresponding authors: Sheng-Yuan Chu; Cheng-Che Tsai; Chia-Ling Wei; Yun-Hui Liu.) Ze-Hui Chen is with the Department of Nano-Integrated Circuit Engineering, National Cheng Kung University, Tainan 701, Taiwan. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2020",

month = oct,

doi = "10.1109/TED.2020.3019230",

language = "English",

volume = "67",

pages = "4399--4404",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System. / Chen, Ze Hui; Li, Cheng Ying; Chu, Sheng Yuan; Tsai, Cheng Che; Wang, Yi Hsun; Kao, Hsueh Yu; Wei, Chia Ling; Huang, Yen Hsiang; Hsiao, Po Yu; Liu, Yun Hui.

In: IEEE Transactions on Electron Devices, Vol. 67, No. 10, 9187544, 10.2020, p. 4399-4404.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System

AU - Chen, Ze Hui

AU - Li, Cheng Ying

AU - Chu, Sheng Yuan

AU - Tsai, Cheng Che

AU - Wang, Yi Hsun

AU - Kao, Hsueh Yu

AU - Wei, Chia Ling

AU - Huang, Yen Hsiang

AU - Hsiao, Po Yu

AU - Liu, Yun Hui

N1 - Funding Information: Manuscript received July 8, 2020; revised August 11, 2020; accepted August 13, 2020. Date of publication September 7, 2020; date of current version September 22, 2020. This work was supported by the Ministry of Science and Technology, Taiwan, under Grant MOST 109-2218-E-006 -027. The review of this article was arranged by Editor F. Ayazi. (Corresponding authors: Sheng-Yuan Chu; Cheng-Che Tsai; Chia-Ling Wei; Yun-Hui Liu.) Ze-Hui Chen is with the Department of Nano-Integrated Circuit Engineering, National Cheng Kung University, Tainan 701, Taiwan. Publisher Copyright: © 1963-2012 IEEE.

PY - 2020/10

Y1 - 2020/10

N2 - In this study, we successfully deposited ${c}$ -axis-oriented aluminum nitride piezoelectric films via low-temperature dc sputtering method. Based on the X-ray diffraction (XRD) and TEM analyses, deposited films with a ${c}$ -axis monocrystal were identified. The effective ${d}_{{33},{f}}$ value of the aluminum nitride (AlN) films is 5.92 pC/N, which is better than most of the reported data using dc sputtering processing. Using ANSYS software, we simulated and designed MEMS accelerometers based on AlN films. Furthermore, we successfully fabricated MEMS accelerometers. The sensitivity of the MEMS accelerometer is 1.49 mV/g, and the resonance frequency is 7.2 kHz. The MEMS accelerometer was combined with a sensing circuit constituting a module. The sensitivity of the module increases approximately tenfold. Finally, the vibration of spindles was successfully detected using the designed module.

AB - In this study, we successfully deposited ${c}$ -axis-oriented aluminum nitride piezoelectric films via low-temperature dc sputtering method. Based on the X-ray diffraction (XRD) and TEM analyses, deposited films with a ${c}$ -axis monocrystal were identified. The effective ${d}_{{33},{f}}$ value of the aluminum nitride (AlN) films is 5.92 pC/N, which is better than most of the reported data using dc sputtering processing. Using ANSYS software, we simulated and designed MEMS accelerometers based on AlN films. Furthermore, we successfully fabricated MEMS accelerometers. The sensitivity of the MEMS accelerometer is 1.49 mV/g, and the resonance frequency is 7.2 kHz. The MEMS accelerometer was combined with a sensing circuit constituting a module. The sensitivity of the module increases approximately tenfold. Finally, the vibration of spindles was successfully detected using the designed module.

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U2 - 10.1109/TED.2020.3019230

DO - 10.1109/TED.2020.3019230

M3 - Article

AN - SCOPUS:85092093485

VL - 67

SP - 4399

EP - 4404

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

M1 - 9187544

ER -

The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System

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