The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System

Ze Hui Chen; Cheng Ying Li; Sheng Yuan Chu; Cheng Che Tsai; Yi Hsun Wang; Hsueh Yu Kao; Chia Ling Wei; Yen Hsiang Huang; Po Yu Hsiao; Yun Hui Liu

doi:10.1109/TED.2020.3019230

The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System

Ze Hui Chen, Cheng Ying Li, Sheng Yuan Chu, Cheng Che Tsai, Yi Hsun Wang, Hsueh Yu Kao, Chia Ling Wei, Yen Hsiang Huang, Po Yu Hsiao, Yun Hui Liu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

In this study, we successfully deposited ${c}$ -axis-oriented aluminum nitride piezoelectric films via low-temperature dc sputtering method. Based on the X-ray diffraction (XRD) and TEM analyses, deposited films with a ${c}$ -axis monocrystal were identified. The effective ${d}_{{33},{f}}$ value of the aluminum nitride (AlN) films is 5.92 pC/N, which is better than most of the reported data using dc sputtering processing. Using ANSYS software, we simulated and designed MEMS accelerometers based on AlN films. Furthermore, we successfully fabricated MEMS accelerometers. The sensitivity of the MEMS accelerometer is 1.49 mV/g, and the resonance frequency is 7.2 kHz. The MEMS accelerometer was combined with a sensing circuit constituting a module. The sensitivity of the module increases approximately tenfold. Finally, the vibration of spindles was successfully detected using the designed module.

Original language	English
Article number	9187544
Pages (from-to)	4399-4404
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	10
DOIs	https://doi.org/10.1109/TED.2020.3019230
Publication status	Published - 2020 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2020.3019230

Cite this

@article{caf5749e069545be898b15a62def1973,

title = "The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System",

abstract = "In this study, we successfully deposited ${c}$ -axis-oriented aluminum nitride piezoelectric films via low-temperature dc sputtering method. Based on the X-ray diffraction (XRD) and TEM analyses, deposited films with a ${c}$ -axis monocrystal were identified. The effective ${d}_{{33},{f}}$ value of the aluminum nitride (AlN) films is 5.92 pC/N, which is better than most of the reported data using dc sputtering processing. Using ANSYS software, we simulated and designed MEMS accelerometers based on AlN films. Furthermore, we successfully fabricated MEMS accelerometers. The sensitivity of the MEMS accelerometer is 1.49 mV/g, and the resonance frequency is 7.2 kHz. The MEMS accelerometer was combined with a sensing circuit constituting a module. The sensitivity of the module increases approximately tenfold. Finally, the vibration of spindles was successfully detected using the designed module.",

author = "Chen, {Ze Hui} and Li, {Cheng Ying} and Chu, {Sheng Yuan} and Tsai, {Cheng Che} and Wang, {Yi Hsun} and Kao, {Hsueh Yu} and Wei, {Chia Ling} and Huang, {Yen Hsiang} and Hsiao, {Po Yu} and Liu, {Yun Hui}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2020",

month = oct,

doi = "10.1109/TED.2020.3019230",

language = "English",

volume = "67",

pages = "4399--4404",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System

AU - Chen, Ze Hui

AU - Li, Cheng Ying

AU - Chu, Sheng Yuan

AU - Tsai, Cheng Che

AU - Wang, Yi Hsun

AU - Kao, Hsueh Yu

AU - Wei, Chia Ling

AU - Huang, Yen Hsiang

AU - Hsiao, Po Yu

AU - Liu, Yun Hui

PY - 2020/10

Y1 - 2020/10

N2 - In this study, we successfully deposited ${c}$ -axis-oriented aluminum nitride piezoelectric films via low-temperature dc sputtering method. Based on the X-ray diffraction (XRD) and TEM analyses, deposited films with a ${c}$ -axis monocrystal were identified. The effective ${d}_{{33},{f}}$ value of the aluminum nitride (AlN) films is 5.92 pC/N, which is better than most of the reported data using dc sputtering processing. Using ANSYS software, we simulated and designed MEMS accelerometers based on AlN films. Furthermore, we successfully fabricated MEMS accelerometers. The sensitivity of the MEMS accelerometer is 1.49 mV/g, and the resonance frequency is 7.2 kHz. The MEMS accelerometer was combined with a sensing circuit constituting a module. The sensitivity of the module increases approximately tenfold. Finally, the vibration of spindles was successfully detected using the designed module.

AB - In this study, we successfully deposited ${c}$ -axis-oriented aluminum nitride piezoelectric films via low-temperature dc sputtering method. Based on the X-ray diffraction (XRD) and TEM analyses, deposited films with a ${c}$ -axis monocrystal were identified. The effective ${d}_{{33},{f}}$ value of the aluminum nitride (AlN) films is 5.92 pC/N, which is better than most of the reported data using dc sputtering processing. Using ANSYS software, we simulated and designed MEMS accelerometers based on AlN films. Furthermore, we successfully fabricated MEMS accelerometers. The sensitivity of the MEMS accelerometer is 1.49 mV/g, and the resonance frequency is 7.2 kHz. The MEMS accelerometer was combined with a sensing circuit constituting a module. The sensitivity of the module increases approximately tenfold. Finally, the vibration of spindles was successfully detected using the designed module.

UR - http://www.scopus.com/inward/record.url?scp=85092093485&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85092093485&partnerID=8YFLogxK

U2 - 10.1109/TED.2020.3019230

DO - 10.1109/TED.2020.3019230

M3 - Article

AN - SCOPUS:85092093485

SN - 0018-9383

VL - 67

SP - 4399

EP - 4404

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

M1 - 9187544

ER -

The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this