The developement of GaN based High-Speed green and cyan light emitting diodes for plastic optical fiber communication: (Invited Paper)

J. W. Shi, Kai Lun Chi, J. K. Sheu, Juri Vinogradov, Olaf Ziemann

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

We review our work on GaN based green light-emitting diodes (LEDs) for plastic optical fiber (POF) communication. By downscaling device active volumes with optimized doping profile, record-high electrical-tooptical bandwidth (0.4 GHz) among visible LEDs under a moderate bias current (40 mA) can be achieved. By use of packaged LED, 1 Gbit/sec data transmissions over 50 meter POF have been achieved. Such result is comparable with those of the high-performance red resonant cavity LED under the same bias current (40 mA).

Original languageEnglish
Pages213-218
Number of pages6
Publication statusPublished - 2012 Dec 1
Event21st International Conference on Plastic Optical Fibers, POF 2012 - Atlanta, GA, United States
Duration: 2012 Sep 102012 Sep 12

Other

Other21st International Conference on Plastic Optical Fibers, POF 2012
CountryUnited States
CityAtlanta, GA
Period12-09-1012-09-12

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Polymers and Plastics

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    Shi, J. W., Chi, K. L., Sheu, J. K., Vinogradov, J., & Ziemann, O. (2012). The developement of GaN based High-Speed green and cyan light emitting diodes for plastic optical fiber communication: (Invited Paper). 213-218. Paper presented at 21st International Conference on Plastic Optical Fibers, POF 2012, Atlanta, GA, United States.