The development of a new contact type piezoresistive micro-shear-stress sensor

M. C. Hsieh; Y. K. Fang; M. S. Ju; J. J. Ho; S. F. Ting

doi:10.1117/12.462822

The development of a new contact type piezoresistive micro-shear-stress sensor

M. C. Hsieh, Y. K. Fang, M. S. Ju, J. J. Ho, S. F. Ting

Department of Mechanical Engineering

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

A prototype contact type micro piezoresistive shear-stress sensor that can be utilized to measure the shear stress between skin of stump and socket of Above-Knee (AK) prosthesis was designed, fabricated and tested. Micro-electro-mechanical system (MEMS) technology has been chosen for the design because of the low cost, small size and adaptability to this application. In this paper, the Finite Element Method (FEM) package ANSYS has been employed for the stress analysis of the micro shear-stress sensors. The sensors contain two X-ducers that will transform the stresses into an output voltage. In the developed sensor, a 3000×3000×300 μm³ square membrane is formed by bulk micromaching of an n-type 〈100〉 monolithic silicon. The piezoresistive strain gauges were implanted with boron ions with a dose of 10¹⁵ atoms/cm². Static characteristics of the shear sensor were determined through a series of calibration tests. The fabricated sensor exhibits a sensitivity of 0.13 mV/mA-MPa for a 1.4 N full scales shear force range and the overall mean hysteresis error is than 3.5%. In addition, the results simulated by FEM are validated by comparison with experimental investigations.

Original language	English
Pages (from-to)	285-295
Number of pages	11
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4755
DOIs	https://doi.org/10.1117/12.462822
Publication status	Published - 2002
Event	Design, Test, Integration, and packaging of MEMS/MOEMS 2002 - Cannes, France Duration: 2002 May 6 → 2002 May 8

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "The development of a new contact type piezoresistive micro-shear-stress sensor",

abstract = "A prototype contact type micro piezoresistive shear-stress sensor that can be utilized to measure the shear stress between skin of stump and socket of Above-Knee (AK) prosthesis was designed, fabricated and tested. Micro-electro-mechanical system (MEMS) technology has been chosen for the design because of the low cost, small size and adaptability to this application. In this paper, the Finite Element Method (FEM) package ANSYS has been employed for the stress analysis of the micro shear-stress sensors. The sensors contain two X-ducers that will transform the stresses into an output voltage. In the developed sensor, a 3000×3000×300 μm3 square membrane is formed by bulk micromaching of an n-type 〈100〉 monolithic silicon. The piezoresistive strain gauges were implanted with boron ions with a dose of 1015 atoms/cm2. Static characteristics of the shear sensor were determined through a series of calibration tests. The fabricated sensor exhibits a sensitivity of 0.13 mV/mA-MPa for a 1.4 N full scales shear force range and the overall mean hysteresis error is than 3.5%. In addition, the results simulated by FEM are validated by comparison with experimental investigations.",

author = "Hsieh, {M. C.} and Fang, {Y. K.} and Ju, {M. S.} and Ho, {J. J.} and Ting, {S. F.}",

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AU - Ting, S. F.

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AB - A prototype contact type micro piezoresistive shear-stress sensor that can be utilized to measure the shear stress between skin of stump and socket of Above-Knee (AK) prosthesis was designed, fabricated and tested. Micro-electro-mechanical system (MEMS) technology has been chosen for the design because of the low cost, small size and adaptability to this application. In this paper, the Finite Element Method (FEM) package ANSYS has been employed for the stress analysis of the micro shear-stress sensors. The sensors contain two X-ducers that will transform the stresses into an output voltage. In the developed sensor, a 3000×3000×300 μm3 square membrane is formed by bulk micromaching of an n-type 〈100〉 monolithic silicon. The piezoresistive strain gauges were implanted with boron ions with a dose of 1015 atoms/cm2. Static characteristics of the shear sensor were determined through a series of calibration tests. The fabricated sensor exhibits a sensitivity of 0.13 mV/mA-MPa for a 1.4 N full scales shear force range and the overall mean hysteresis error is than 3.5%. In addition, the results simulated by FEM are validated by comparison with experimental investigations.

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The development of a new contact type piezoresistive micro-shear-stress sensor

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