The development of high-speed ill-nitride based light-emitting diode for visible light and plastic Optical fiber communications

Jin Wei Shi, J. K. Sheu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We review our work on GaN high-speed LED, By optimizing MQWs structure in our device, record-high data rates (5.5 Gbit/sec) over POF among all visible LEDs can be achieved. Besides, a high-lumens, high-CRI (95), and high-speed white-light LED has been demonstrated for indoor VLC.

Original languageEnglish
Title of host publication30th Annual Conference of the IEEE Photonics Society, IPC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages73-74
Number of pages2
ISBN (Electronic)9781509065783
DOIs
Publication statusPublished - 2017 Nov 20
Event30th Annual Conference of the IEEE Photonics Society, IPC 2017 - Lake Buena Vista, United States
Duration: 2017 Oct 12017 Oct 5

Publication series

Name30th Annual Conference of the IEEE Photonics Society, IPC 2017
Volume2017-January

Other

Other30th Annual Conference of the IEEE Photonics Society, IPC 2017
CountryUnited States
CityLake Buena Vista
Period17-10-0117-10-05

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All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications
  • Instrumentation

Cite this

Shi, J. W., & Sheu, J. K. (2017). The development of high-speed ill-nitride based light-emitting diode for visible light and plastic Optical fiber communications. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 (pp. 73-74). (30th Annual Conference of the IEEE Photonics Society, IPC 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2017.8116013