The development of low-temperature atomic layer deposition of hfo2 for tem sample preparation on soft photo-resist substrate

Kang Ping Peng, Ya Chi Liu, I. Feng Lin, Chih Chien Lin, Shu Wei Huang, Chao Cheng Ting

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40°C to 85°C, is reported for the first time. This reveals the potential application in the TEM sample preparation. The thickness, refractive index, band gap, and depth profiling chemical state of the thin film are analyzed by ellipsometry, X-ray diffraction, and photoelectron spectroscopy respectively. Our TEM image shows a clear boundary between the photo-resist and hafnium dioxide deposited on PR, which indicates the low-temperature atomic layer deposition (ALD) may lead a new way for TEM sample preparation in advanced technology node.

Original languageEnglish
Title of host publicationIPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538649299
DOIs
Publication statusPublished - 2018 Aug 30
Event25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 - Singapore, Singapore
Duration: 2018 Jul 162018 Jul 19

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2018-July

Conference

Conference25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018
CountrySingapore
CitySingapore
Period18-07-1618-07-19

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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