The doped quantum well gate fet fabricated by low-pressure MOCVD

W. Lin; M. D. Lei; W. C. Hsu; L. B. Di; F. Kai; C. Y. Chang

doi:10.1143/JJAP.27.L2431

The doped quantum well gate fet fabricated by low-pressure MOCVD

W. Lin, M. D. Lei, W. C. Hsu, L. B. Di, F. Kai, C. Y. Chang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

Abstract

The doped quantum well FETs with Al_0.5Ga_0.5As/GaAs heterostructures have been fabricated using the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method. The conventional δ-doping thin layer in MODFET has been replaced with a doped Al_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5As quantum well. Doping level in the GaAs quantum well was varied to observe the effects on the 2-DEG density in the channel. The corresponding IDsat was increased from 12 mA to 27 mA at V_g=0 V for increasing the doping levelin the well.

Original language	English
Pages (from-to)	L2431-L2433
Journal	Japanese journal of applied physics
Volume	27
Issue number	12A
DOIs	https://doi.org/10.1143/JJAP.27.L2431
Publication status	Published - 1988 Dec

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.27.L2431

Cite this

@article{62a8bae97b7840bb961053f09dd0d7ab,

title = "The doped quantum well gate fet fabricated by low-pressure MOCVD",

abstract = "The doped quantum well FETs with Al0.5Ga0.5As/GaAs heterostructures have been fabricated using the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method. The conventional δ-doping thin layer in MODFET has been replaced with a doped Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum well. Doping level in the GaAs quantum well was varied to observe the effects on the 2-DEG density in the channel. The corresponding IDsat was increased from 12 mA to 27 mA at Vg=0 V for increasing the doping levelin the well.",

author = "W. Lin and Lei, {M. D.} and Hsu, {W. C.} and Di, {L. B.} and F. Kai and Chang, {C. Y.}",

year = "1988",

month = dec,

doi = "10.1143/JJAP.27.L2431",

language = "English",

volume = "27",

pages = "L2431--L2433",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

number = "12A",

}

TY - JOUR

T1 - The doped quantum well gate fet fabricated by low-pressure MOCVD

AU - Lin, W.

AU - Lei, M. D.

AU - Hsu, W. C.

AU - Di, L. B.

AU - Kai, F.

AU - Chang, C. Y.

PY - 1988/12

Y1 - 1988/12

N2 - The doped quantum well FETs with Al0.5Ga0.5As/GaAs heterostructures have been fabricated using the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method. The conventional δ-doping thin layer in MODFET has been replaced with a doped Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum well. Doping level in the GaAs quantum well was varied to observe the effects on the 2-DEG density in the channel. The corresponding IDsat was increased from 12 mA to 27 mA at Vg=0 V for increasing the doping levelin the well.

AB - The doped quantum well FETs with Al0.5Ga0.5As/GaAs heterostructures have been fabricated using the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method. The conventional δ-doping thin layer in MODFET has been replaced with a doped Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum well. Doping level in the GaAs quantum well was varied to observe the effects on the 2-DEG density in the channel. The corresponding IDsat was increased from 12 mA to 27 mA at Vg=0 V for increasing the doping levelin the well.

UR - http://www.scopus.com/inward/record.url?scp=0024136665&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024136665&partnerID=8YFLogxK

U2 - 10.1143/JJAP.27.L2431

DO - 10.1143/JJAP.27.L2431

M3 - Article

AN - SCOPUS:0024136665

SN - 0021-4922

VL - 27

SP - L2431-L2433

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 12A

ER -

The doped quantum well gate fet fabricated by low-pressure MOCVD

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this