The doping process and dopant characteristics of GaN

J. K. Sheu, G. C. Chi

Research output: Contribution to journalArticlepeer-review

113 Citations (Scopus)

Abstract

The characteristic effects of doping with impurities such as Si, Ge, Se, O, Mg, Be, and Zn on the electrical and optical properties of GaN-based materials are reviewed. In addition, the roles of unintentionally introduced impurities, such as C, H, and O, and grown-in defects, such as vacancy and antisite point defects, are also discussed. The doping process during epitaxial growth of GaN, AlGaN, InGaN, and their superlattice structures is described. Doping using the diffusion process and ion implantation techniques is also discussed. A p-n junction formed by Si implantation into p-type GaN is successfully fabricated. The results on crystal structure, electrical resistivity, carder mobility, and optical spectra obtained by means of x-rays, low-temperature Hall measurements, and photoluminescence are also discussed.

Original languageEnglish
Article number201
Pages (from-to)R657-R702
JournalJournal of Physics Condensed Matter
Volume14
Issue number22
DOIs
Publication statusPublished - 2002 Jun 10

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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