The doping process of p-type GaN films

G. G. Chi, C. H. Kuo, J. K. Sheu, C. J. Pan

Research output: Contribution to journalConference articlepeer-review

14 Citations (Scopus)

Abstract

The formation of p-type GaN film is a key technology in developing optoelectronic devices. P-type doping (concentration ∼ 1017 cm-3) has been achieved in grown GaN by metalorganic chemical vapor deposition (MOCVD) with Mg (CP2Mg) doping. The Hall measurement results indicate that Mg diffused GaN films also have p-type conductivity with carrier concentration about 1017 cm-3 and a mobility of 10 cm2 V-1 s-1. For the as-grown Mg-doped GaN, the room temperature photoluminescence (PL) spectra show a blue emission peak around 420-450 nm, and the spectral peak depends on the carrier concentrations. For Mg-diffused GaN, the PL spectra shows only a broad violet emission for samples diffused at 900-1100°C.

Original languageEnglish
Pages (from-to)210-213
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume75
Issue number2-3
DOIs
Publication statusPublished - 2000 Jun 1
EventThe IUMRS International Conference on Advanced Materials 1999, Symposium N: Compound Semiconductors - Beijing, China
Duration: 1999 Jun 131999 Jun 18

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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