The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition

Minh Thien Huu Ha; Sa Hoang Huynh; Huy Binh Do; Ching Ting Lee; Quang Ho Luc; Edward Yi Chang

doi:10.1016/j.tsf.2018.10.056

The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition

Minh Thien Huu Ha, Sa Hoang Huynh, Huy Binh Do, Ching Ting Lee, Quang Ho Luc, Edward Yi Chang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A method for the growth of high quality GaSb epilayer on GaAs (001) substrate is demonstrated in this study. It is found that a superior GaSb/GaAs interface can be obtained by depositing a thin Sb-precursor layer on the GaAs substrate containing a GaAs buffer layer. It is suggested that the growth occurs via the interface misfit (IMF) growth mode. Without this treatment, GaSb epilayer may grow according to the Stranski–Krastanov mechanism or via a blend of the Stranski–Krastanov and IMF mechanisms, leading to an inferior GaSb/GaAs interface. This could be due to the intermixing of anions, leading to the turbulent composition and misfit dislocation distribution at the heterointerface. It appears that with the addition of a Sb layer, IMF arrays can be formed at GaSb/GaAs interface resulting in superior GaSb layer without the need for changing the growth parameters.

Original language	English
Pages (from-to)	430-435
Number of pages	6
Journal	Thin Solid Films
Volume	669
DOIs	https://doi.org/10.1016/j.tsf.2018.10.056
Publication status	Published - 2019 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2018.10.056

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title = "The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition",

abstract = "A method for the growth of high quality GaSb epilayer on GaAs (001) substrate is demonstrated in this study. It is found that a superior GaSb/GaAs interface can be obtained by depositing a thin Sb-precursor layer on the GaAs substrate containing a GaAs buffer layer. It is suggested that the growth occurs via the interface misfit (IMF) growth mode. Without this treatment, GaSb epilayer may grow according to the Stranski–Krastanov mechanism or via a blend of the Stranski–Krastanov and IMF mechanisms, leading to an inferior GaSb/GaAs interface. This could be due to the intermixing of anions, leading to the turbulent composition and misfit dislocation distribution at the heterointerface. It appears that with the addition of a Sb layer, IMF arrays can be formed at GaSb/GaAs interface resulting in superior GaSb layer without the need for changing the growth parameters.",

author = "Ha, {Minh Thien Huu} and Huynh, {Sa Hoang} and Do, {Huy Binh} and Lee, {Ching Ting} and Luc, {Quang Ho} and Chang, {Edward Yi}",

note = "Funding Information: This work was financially supported by the “ Center for Semiconductor Technology Research ” from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. Also supported in part by the Ministry of Science and Technology, Taiwan , under Grant MOST-107-3017-F-009-002 . Funding Information: This work was financially supported by the “Center for Semiconductor Technology Research” from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. Also supported in part by the Ministry of Science and Technology, Taiwan, under Grant MOST-107-3017-F-009-002. Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

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AU - Ha, Minh Thien Huu

AU - Huynh, Sa Hoang

AU - Do, Huy Binh

AU - Lee, Ching Ting

AU - Luc, Quang Ho

AU - Chang, Edward Yi

N1 - Funding Information: This work was financially supported by the “ Center for Semiconductor Technology Research ” from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. Also supported in part by the Ministry of Science and Technology, Taiwan , under Grant MOST-107-3017-F-009-002 . Funding Information: This work was financially supported by the “Center for Semiconductor Technology Research” from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. Also supported in part by the Ministry of Science and Technology, Taiwan, under Grant MOST-107-3017-F-009-002. Publisher Copyright: © 2018 Elsevier B.V.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - A method for the growth of high quality GaSb epilayer on GaAs (001) substrate is demonstrated in this study. It is found that a superior GaSb/GaAs interface can be obtained by depositing a thin Sb-precursor layer on the GaAs substrate containing a GaAs buffer layer. It is suggested that the growth occurs via the interface misfit (IMF) growth mode. Without this treatment, GaSb epilayer may grow according to the Stranski–Krastanov mechanism or via a blend of the Stranski–Krastanov and IMF mechanisms, leading to an inferior GaSb/GaAs interface. This could be due to the intermixing of anions, leading to the turbulent composition and misfit dislocation distribution at the heterointerface. It appears that with the addition of a Sb layer, IMF arrays can be formed at GaSb/GaAs interface resulting in superior GaSb layer without the need for changing the growth parameters.

AB - A method for the growth of high quality GaSb epilayer on GaAs (001) substrate is demonstrated in this study. It is found that a superior GaSb/GaAs interface can be obtained by depositing a thin Sb-precursor layer on the GaAs substrate containing a GaAs buffer layer. It is suggested that the growth occurs via the interface misfit (IMF) growth mode. Without this treatment, GaSb epilayer may grow according to the Stranski–Krastanov mechanism or via a blend of the Stranski–Krastanov and IMF mechanisms, leading to an inferior GaSb/GaAs interface. This could be due to the intermixing of anions, leading to the turbulent composition and misfit dislocation distribution at the heterointerface. It appears that with the addition of a Sb layer, IMF arrays can be formed at GaSb/GaAs interface resulting in superior GaSb layer without the need for changing the growth parameters.

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The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition

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