The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition

Minh Thien Huu Ha, Sa Hoang Huynh, Huy Binh Do, Ching Ting Lee, Quang Ho Luc, Edward Yi Chang

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Abstract

A method for the growth of high quality GaSb epilayer on GaAs (001) substrate is demonstrated in this study. It is found that a superior GaSb/GaAs interface can be obtained by depositing a thin Sb-precursor layer on the GaAs substrate containing a GaAs buffer layer. It is suggested that the growth occurs via the interface misfit (IMF) growth mode. Without this treatment, GaSb epilayer may grow according to the Stranski–Krastanov mechanism or via a blend of the Stranski–Krastanov and IMF mechanisms, leading to an inferior GaSb/GaAs interface. This could be due to the intermixing of anions, leading to the turbulent composition and misfit dislocation distribution at the heterointerface. It appears that with the addition of a Sb layer, IMF arrays can be formed at GaSb/GaAs interface resulting in superior GaSb layer without the need for changing the growth parameters.

Original languageEnglish
Pages (from-to)430-435
Number of pages6
JournalThin Solid Films
Volume669
DOIs
Publication statusPublished - 2019 Jan 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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