The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition

Minh Thien Huu Ha, Sa Hoang Huynh, Huy Binh Do, Ching Ting Lee, Quang Ho Luc, Edward Yi Chang

Research output: Contribution to journalArticle

Abstract

A method for the growth of high quality GaSb epilayer on GaAs (001) substrate is demonstrated in this study. It is found that a superior GaSb/GaAs interface can be obtained by depositing a thin Sb-precursor layer on the GaAs substrate containing a GaAs buffer layer. It is suggested that the growth occurs via the interface misfit (IMF) growth mode. Without this treatment, GaSb epilayer may grow according to the Stranski–Krastanov mechanism or via a blend of the Stranski–Krastanov and IMF mechanisms, leading to an inferior GaSb/GaAs interface. This could be due to the intermixing of anions, leading to the turbulent composition and misfit dislocation distribution at the heterointerface. It appears that with the addition of a Sb layer, IMF arrays can be formed at GaSb/GaAs interface resulting in superior GaSb layer without the need for changing the growth parameters.

Original languageEnglish
Pages (from-to)430-435
Number of pages6
JournalThin Solid Films
Volume669
DOIs
Publication statusPublished - 2019 Jan 1

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Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Epilayers
Substrates
Buffer layers
Dislocations (crystals)
Negative ions
Anions
gallium arsenide
buffers
Chemical analysis
anions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Ha, Minh Thien Huu ; Huynh, Sa Hoang ; Do, Huy Binh ; Lee, Ching Ting ; Luc, Quang Ho ; Chang, Edward Yi. / The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition. In: Thin Solid Films. 2019 ; Vol. 669. pp. 430-435.
@article{bdd5c2a9f70c43718ef89565638ce078,
title = "The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition",
abstract = "A method for the growth of high quality GaSb epilayer on GaAs (001) substrate is demonstrated in this study. It is found that a superior GaSb/GaAs interface can be obtained by depositing a thin Sb-precursor layer on the GaAs substrate containing a GaAs buffer layer. It is suggested that the growth occurs via the interface misfit (IMF) growth mode. Without this treatment, GaSb epilayer may grow according to the Stranski–Krastanov mechanism or via a blend of the Stranski–Krastanov and IMF mechanisms, leading to an inferior GaSb/GaAs interface. This could be due to the intermixing of anions, leading to the turbulent composition and misfit dislocation distribution at the heterointerface. It appears that with the addition of a Sb layer, IMF arrays can be formed at GaSb/GaAs interface resulting in superior GaSb layer without the need for changing the growth parameters.",
author = "Ha, {Minh Thien Huu} and Huynh, {Sa Hoang} and Do, {Huy Binh} and Lee, {Ching Ting} and Luc, {Quang Ho} and Chang, {Edward Yi}",
year = "2019",
month = "1",
day = "1",
doi = "10.1016/j.tsf.2018.10.056",
language = "English",
volume = "669",
pages = "430--435",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition. / Ha, Minh Thien Huu; Huynh, Sa Hoang; Do, Huy Binh; Lee, Ching Ting; Luc, Quang Ho; Chang, Edward Yi.

In: Thin Solid Films, Vol. 669, 01.01.2019, p. 430-435.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition

AU - Ha, Minh Thien Huu

AU - Huynh, Sa Hoang

AU - Do, Huy Binh

AU - Lee, Ching Ting

AU - Luc, Quang Ho

AU - Chang, Edward Yi

PY - 2019/1/1

Y1 - 2019/1/1

N2 - A method for the growth of high quality GaSb epilayer on GaAs (001) substrate is demonstrated in this study. It is found that a superior GaSb/GaAs interface can be obtained by depositing a thin Sb-precursor layer on the GaAs substrate containing a GaAs buffer layer. It is suggested that the growth occurs via the interface misfit (IMF) growth mode. Without this treatment, GaSb epilayer may grow according to the Stranski–Krastanov mechanism or via a blend of the Stranski–Krastanov and IMF mechanisms, leading to an inferior GaSb/GaAs interface. This could be due to the intermixing of anions, leading to the turbulent composition and misfit dislocation distribution at the heterointerface. It appears that with the addition of a Sb layer, IMF arrays can be formed at GaSb/GaAs interface resulting in superior GaSb layer without the need for changing the growth parameters.

AB - A method for the growth of high quality GaSb epilayer on GaAs (001) substrate is demonstrated in this study. It is found that a superior GaSb/GaAs interface can be obtained by depositing a thin Sb-precursor layer on the GaAs substrate containing a GaAs buffer layer. It is suggested that the growth occurs via the interface misfit (IMF) growth mode. Without this treatment, GaSb epilayer may grow according to the Stranski–Krastanov mechanism or via a blend of the Stranski–Krastanov and IMF mechanisms, leading to an inferior GaSb/GaAs interface. This could be due to the intermixing of anions, leading to the turbulent composition and misfit dislocation distribution at the heterointerface. It appears that with the addition of a Sb layer, IMF arrays can be formed at GaSb/GaAs interface resulting in superior GaSb layer without the need for changing the growth parameters.

UR - http://www.scopus.com/inward/record.url?scp=85056908741&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85056908741&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2018.10.056

DO - 10.1016/j.tsf.2018.10.056

M3 - Article

AN - SCOPUS:85056908741

VL - 669

SP - 430

EP - 435

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -