The effect of As on Al and Ga segregation during the codeposition of Al, Ga and As on a GaAs(100) surface: kinetic simulations

Yan Ten Lu; Horia Metiu

doi:10.1016/0039-6028(91)90654-B

The effect of As on Al and Ga segregation during the codeposition of Al, Ga and As on a GaAs(100) surface: kinetic simulations

Yan Ten Lu, Horia Metiu

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report kinetic simulations of the growth patterns generated by the codeposition of Al, Ga and As on a GaAs(100) surface and compare them to the patterns generated when Al and Ga are codeposited in the absence of As. We find that the presence of As can affect dramatically the aggregation of Al. At zero As pressure the Al atoms aggregate to form a long strip with smooth borders. Addition of As prevents strip formation and leads to the growth of many islands with irregular AlGa borders. This trend is increased by higher As flux or by lower temperature.

Original language	English
Pages (from-to)	209-221
Number of pages	13
Journal	Surface Science
Volume	254
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(91)90654-B
Publication status	Published - 1991 Aug 2

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(91)90654-B

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title = "The effect of As on Al and Ga segregation during the codeposition of Al, Ga and As on a GaAs(100) surface: kinetic simulations",

abstract = "We report kinetic simulations of the growth patterns generated by the codeposition of Al, Ga and As on a GaAs(100) surface and compare them to the patterns generated when Al and Ga are codeposited in the absence of As. We find that the presence of As can affect dramatically the aggregation of Al. At zero As pressure the Al atoms aggregate to form a long strip with smooth borders. Addition of As prevents strip formation and leads to the growth of many islands with irregular AlGa borders. This trend is increased by higher As flux or by lower temperature.",

author = "Lu, {Yan Ten} and Horia Metiu",

note = "Funding Information: This work was supported by the NSF Science and Technology Center QUEST at the University of California at Santa Barbara. We are very grateful to Pierre Petroff for many stimulating discussions and advice.",

year = "1991",

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doi = "10.1016/0039-6028(91)90654-B",

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T1 - The effect of As on Al and Ga segregation during the codeposition of Al, Ga and As on a GaAs(100) surface

T2 - kinetic simulations

AU - Lu, Yan Ten

AU - Metiu, Horia

N1 - Funding Information: This work was supported by the NSF Science and Technology Center QUEST at the University of California at Santa Barbara. We are very grateful to Pierre Petroff for many stimulating discussions and advice.

PY - 1991/8/2

Y1 - 1991/8/2

N2 - We report kinetic simulations of the growth patterns generated by the codeposition of Al, Ga and As on a GaAs(100) surface and compare them to the patterns generated when Al and Ga are codeposited in the absence of As. We find that the presence of As can affect dramatically the aggregation of Al. At zero As pressure the Al atoms aggregate to form a long strip with smooth borders. Addition of As prevents strip formation and leads to the growth of many islands with irregular AlGa borders. This trend is increased by higher As flux or by lower temperature.

AB - We report kinetic simulations of the growth patterns generated by the codeposition of Al, Ga and As on a GaAs(100) surface and compare them to the patterns generated when Al and Ga are codeposited in the absence of As. We find that the presence of As can affect dramatically the aggregation of Al. At zero As pressure the Al atoms aggregate to form a long strip with smooth borders. Addition of As prevents strip formation and leads to the growth of many islands with irregular AlGa borders. This trend is increased by higher As flux or by lower temperature.

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The effect of As on Al and Ga segregation during the codeposition of Al, Ga and As on a GaAs(100) surface: kinetic simulations

Abstract

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