The effect of As on Al and Ga segregation during the codeposition of Al, Ga and As on a GaAs(100) surface: kinetic simulations

Yan Ten Lu, Horia Metiu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We report kinetic simulations of the growth patterns generated by the codeposition of Al, Ga and As on a GaAs(100) surface and compare them to the patterns generated when Al and Ga are codeposited in the absence of As. We find that the presence of As can affect dramatically the aggregation of Al. At zero As pressure the Al atoms aggregate to form a long strip with smooth borders. Addition of As prevents strip formation and leads to the growth of many islands with irregular AlGa borders. This trend is increased by higher As flux or by lower temperature.

Original languageEnglish
Pages (from-to)209-221
Number of pages13
JournalSurface Science
Volume254
Issue number1-3
DOIs
Publication statusPublished - 1991 Aug 2

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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