The effect of band offset on the negative differential resistance characteristics of GaAs resonant tunnelling devices

M. P. Houng; Y. H. Wang; H. C. Wei

doi:10.1088/0268-1242/6/9/009

The effect of band offset on the negative differential resistance characteristics of GaAs resonant tunnelling devices

M. P. Houng, Y. H. Wang, H. C. Wei

Research output: Contribution to journal › Article › peer-review

Abstract

AlGaAs/GaAs heterojunction resonant tunnelling bipolar transistors, with superlattice base, have been fabricated. For the single heterojunction structure an S-shaped NDR behaviour can be obtained when it is forward biased, due to the impact ionization enhancement in the AlGaAs/GaAs heterojunction. While it is reverse biased an N-shaped NDR behaviour comes after an insignificant S-shaped behaviour. It is believed to be the initiation of a resonant tunnelling process across the superlattice region. As for the double heterojunction structure, the I-V characteristic shows a bi-directional S-shaped switching behaviour. The different performance between the two structures can be modelled as the effect of the band offset of the heterojunction.

Original language	English
Article number	009
Pages (from-to)	886-889
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	6
Issue number	9
DOIs	https://doi.org/10.1088/0268-1242/6/9/009
Publication status	Published - 1991 Dec 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/6/9/009

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abstract = "AlGaAs/GaAs heterojunction resonant tunnelling bipolar transistors, with superlattice base, have been fabricated. For the single heterojunction structure an S-shaped NDR behaviour can be obtained when it is forward biased, due to the impact ionization enhancement in the AlGaAs/GaAs heterojunction. While it is reverse biased an N-shaped NDR behaviour comes after an insignificant S-shaped behaviour. It is believed to be the initiation of a resonant tunnelling process across the superlattice region. As for the double heterojunction structure, the I-V characteristic shows a bi-directional S-shaped switching behaviour. The different performance between the two structures can be modelled as the effect of the band offset of the heterojunction.",

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T1 - The effect of band offset on the negative differential resistance characteristics of GaAs resonant tunnelling devices

AU - Houng, M. P.

AU - Wang, Y. H.

AU - Wei, H. C.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - AlGaAs/GaAs heterojunction resonant tunnelling bipolar transistors, with superlattice base, have been fabricated. For the single heterojunction structure an S-shaped NDR behaviour can be obtained when it is forward biased, due to the impact ionization enhancement in the AlGaAs/GaAs heterojunction. While it is reverse biased an N-shaped NDR behaviour comes after an insignificant S-shaped behaviour. It is believed to be the initiation of a resonant tunnelling process across the superlattice region. As for the double heterojunction structure, the I-V characteristic shows a bi-directional S-shaped switching behaviour. The different performance between the two structures can be modelled as the effect of the band offset of the heterojunction.

AB - AlGaAs/GaAs heterojunction resonant tunnelling bipolar transistors, with superlattice base, have been fabricated. For the single heterojunction structure an S-shaped NDR behaviour can be obtained when it is forward biased, due to the impact ionization enhancement in the AlGaAs/GaAs heterojunction. While it is reverse biased an N-shaped NDR behaviour comes after an insignificant S-shaped behaviour. It is believed to be the initiation of a resonant tunnelling process across the superlattice region. As for the double heterojunction structure, the I-V characteristic shows a bi-directional S-shaped switching behaviour. The different performance between the two structures can be modelled as the effect of the band offset of the heterojunction.

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The effect of band offset on the negative differential resistance characteristics of GaAs resonant tunnelling devices

Abstract

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