The effect of CdTe deposition temperature on device properties of different TCOs and glass substrates

Ramesh Dhere; Max Bonnet-Eymard; Emilie Charlet; Emmanuelle Peter; Joel Duenow; Helio Moutinho; Jian V. Li; Marty Scott; Dave Albin; Tim Gessert

doi:10.1109/PVSC.2010.5616929

The effect of CdTe deposition temperature on device properties of different TCOs and glass substrates

Ramesh Dhere, Max Bonnet-Eymard, Emilie Charlet, Emmanuelle Peter, Joel Duenow, Helio Moutinho, Jian V. Li, Marty Scott, Dave Albin, Tim Gessert

Department of Aeronautics and Astronautics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper, we present our work on devices fabricated using CdTe films deposited by close-spaced sublimation using substrate temperatures in the range of 450° to 620° C. We studied devices prepared on Saint-Gobain soda lime SGG Diamant and Corning 7059 borosilicate glass substrates. We used four types of contact: SnO₂:F, ITO, CTO, and Saint-Gobain AZO with and without high-resistivity buffer layers. We used a variety of buffer layers: undoped SnO₂, zinc tin oxide (ZTO), and proprietary Saint-Gobain buffer layers. A buffer layer is crucial for devices using CTO and AZO as the front contact. For AZO layers developed by Saint-Gobain, we achieved 9% efficiency without a buffer layer and over 12% efficiency using buffer layers when CdTe films are deposited below 500° C. We used standard current density-voltage and quantum efficiency analysis to determine the device parameters.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	340-344
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2010.5616929
Publication status	Published - 2010 Dec 20
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 2010 Jun 20 → 2010 Jun 25

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country	United States
City	Honolulu, HI
Period	10-06-20 → 10-06-25

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2010.5616929

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Dhere, R., Bonnet-Eymard, M., Charlet, E., Peter, E., Duenow, J., Moutinho, H., Li, J. V., Scott, M., Albin, D., & Gessert, T. (2010). The effect of CdTe deposition temperature on device properties of different TCOs and glass substrates. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 340-344). [5616929] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5616929

Dhere, Ramesh ; Bonnet-Eymard, Max ; Charlet, Emilie ; Peter, Emmanuelle ; Duenow, Joel ; Moutinho, Helio ; Li, Jian V. ; Scott, Marty ; Albin, Dave ; Gessert, Tim. / The effect of CdTe deposition temperature on device properties of different TCOs and glass substrates. Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. pp. 340-344 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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title = "The effect of CdTe deposition temperature on device properties of different TCOs and glass substrates",

abstract = "In this paper, we present our work on devices fabricated using CdTe films deposited by close-spaced sublimation using substrate temperatures in the range of 450° to 620° C. We studied devices prepared on Saint-Gobain soda lime SGG Diamant and Corning 7059 borosilicate glass substrates. We used four types of contact: SnO2:F, ITO, CTO, and Saint-Gobain AZO with and without high-resistivity buffer layers. We used a variety of buffer layers: undoped SnO2, zinc tin oxide (ZTO), and proprietary Saint-Gobain buffer layers. A buffer layer is crucial for devices using CTO and AZO as the front contact. For AZO layers developed by Saint-Gobain, we achieved 9% efficiency without a buffer layer and over 12% efficiency using buffer layers when CdTe films are deposited below 500° C. We used standard current density-voltage and quantum efficiency analysis to determine the device parameters.",

author = "Ramesh Dhere and Max Bonnet-Eymard and Emilie Charlet and Emmanuelle Peter and Joel Duenow and Helio Moutinho and Li, {Jian V.} and Marty Scott and Dave Albin and Tim Gessert",

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doi = "10.1109/PVSC.2010.5616929",

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Dhere, R, Bonnet-Eymard, M, Charlet, E, Peter, E, Duenow, J, Moutinho, H, Li, JV, Scott, M, Albin, D & Gessert, T 2010, The effect of CdTe deposition temperature on device properties of different TCOs and glass substrates. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5616929, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 340-344, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 10-06-20. https://doi.org/10.1109/PVSC.2010.5616929

The effect of CdTe deposition temperature on device properties of different TCOs and glass substrates. / Dhere, Ramesh; Bonnet-Eymard, Max; Charlet, Emilie; Peter, Emmanuelle; Duenow, Joel; Moutinho, Helio; Li, Jian V.; Scott, Marty; Albin, Dave; Gessert, Tim.

Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 340-344 5616929 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Peter, Emmanuelle

AU - Duenow, Joel

AU - Moutinho, Helio

AU - Li, Jian V.

AU - Scott, Marty

AU - Albin, Dave

AU - Gessert, Tim

PY - 2010/12/20

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N2 - In this paper, we present our work on devices fabricated using CdTe films deposited by close-spaced sublimation using substrate temperatures in the range of 450° to 620° C. We studied devices prepared on Saint-Gobain soda lime SGG Diamant and Corning 7059 borosilicate glass substrates. We used four types of contact: SnO2:F, ITO, CTO, and Saint-Gobain AZO with and without high-resistivity buffer layers. We used a variety of buffer layers: undoped SnO2, zinc tin oxide (ZTO), and proprietary Saint-Gobain buffer layers. A buffer layer is crucial for devices using CTO and AZO as the front contact. For AZO layers developed by Saint-Gobain, we achieved 9% efficiency without a buffer layer and over 12% efficiency using buffer layers when CdTe films are deposited below 500° C. We used standard current density-voltage and quantum efficiency analysis to determine the device parameters.

AB - In this paper, we present our work on devices fabricated using CdTe films deposited by close-spaced sublimation using substrate temperatures in the range of 450° to 620° C. We studied devices prepared on Saint-Gobain soda lime SGG Diamant and Corning 7059 borosilicate glass substrates. We used four types of contact: SnO2:F, ITO, CTO, and Saint-Gobain AZO with and without high-resistivity buffer layers. We used a variety of buffer layers: undoped SnO2, zinc tin oxide (ZTO), and proprietary Saint-Gobain buffer layers. A buffer layer is crucial for devices using CTO and AZO as the front contact. For AZO layers developed by Saint-Gobain, we achieved 9% efficiency without a buffer layer and over 12% efficiency using buffer layers when CdTe films are deposited below 500° C. We used standard current density-voltage and quantum efficiency analysis to determine the device parameters.

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T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

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BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

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Dhere R, Bonnet-Eymard M, Charlet E, Peter E, Duenow J, Moutinho H et al. The effect of CdTe deposition temperature on device properties of different TCOs and glass substrates. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 340-344. 5616929. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5616929