In this paper, we present our work on devices fabricated using CdTe films deposited by close-spaced sublimation using substrate temperatures in the range of 450° to 620° C. We studied devices prepared on Saint-Gobain soda lime SGG Diamant and Corning 7059 borosilicate glass substrates. We used four types of contact: SnO2:F, ITO, CTO, and Saint-Gobain AZO with and without high-resistivity buffer layers. We used a variety of buffer layers: undoped SnO2, zinc tin oxide (ZTO), and proprietary Saint-Gobain buffer layers. A buffer layer is crucial for devices using CTO and AZO as the front contact. For AZO layers developed by Saint-Gobain, we achieved 9% efficiency without a buffer layer and over 12% efficiency using buffer layers when CdTe films are deposited below 500° C. We used standard current density-voltage and quantum efficiency analysis to determine the device parameters.