The effect of deposition temperature and chamber pressure on the electrical and physical properties of the MgTiO3 thin films

Yuan Bin Chen, Cheng-Liang Huang, Shih Hung Lin

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The effects of deposition temperature and pressure on the properties of MgTiO3 the films were investigated. MgTiO3 thin films were grown on Si(1 0 0) substrate by radio frequency (RF) magnetron sputtering. The microstructure and the surface morphology of MgTiO3 thin film have been studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the film increased with an increase in the substrate temperature. The electrical properties were measured using C-V and current-voltage (I-V) measurements on metal-insulator-semiconductor (MIS) capacitor structures. At a Ar/O2 ratio of 100/0, RF power of 400 W and substrate temperature of 350 °C, the MgTiO3 films with 5.62 μm thickness possess a dielectric constant of 15.91 (f = 10 MHz), a leakage current density of 9.1 × 10-10 A/mm2 was obtained at 500 kV/cm. The leakage current decreased with decrease chamber pressure and substrate temperature.

Original languageEnglish
Pages (from-to)897-902
Number of pages6
JournalJournal of Alloys and Compounds
Volume480
Issue number2
DOIs
Publication statusPublished - 2009 Jul 8

Fingerprint

Electric properties
Physical properties
Thin films
Substrates
Leakage currents
X ray diffraction
Temperature
Microstructure
Magnetron sputtering
Surface morphology
Atomic force microscopy
Capacitors
Permittivity
Current density
Metals
Semiconductor materials
magnesium titanate
Electric potential

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "The effects of deposition temperature and pressure on the properties of MgTiO3 the films were investigated. MgTiO3 thin films were grown on Si(1 0 0) substrate by radio frequency (RF) magnetron sputtering. The microstructure and the surface morphology of MgTiO3 thin film have been studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the film increased with an increase in the substrate temperature. The electrical properties were measured using C-V and current-voltage (I-V) measurements on metal-insulator-semiconductor (MIS) capacitor structures. At a Ar/O2 ratio of 100/0, RF power of 400 W and substrate temperature of 350 °C, the MgTiO3 films with 5.62 μm thickness possess a dielectric constant of 15.91 (f = 10 MHz), a leakage current density of 9.1 × 10-10 A/mm2 was obtained at 500 kV/cm. The leakage current decreased with decrease chamber pressure and substrate temperature.",
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The effect of deposition temperature and chamber pressure on the electrical and physical properties of the MgTiO3 thin films. / Chen, Yuan Bin; Huang, Cheng-Liang; Lin, Shih Hung.

In: Journal of Alloys and Compounds, Vol. 480, No. 2, 08.07.2009, p. 897-902.

Research output: Contribution to journalArticle

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