The effect of deposition temperature and RF power on the electrical and physical properties of the MgTiO3 thin films

Cheng Liang Huang, Yuan Bin Chen

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

MgTiO3 thin films were grown on Si(1 0 0) substrate by radio frequency (RF) magnetron sputtering. The microstructure and the surface morphology of MgTiO3 thin film have been studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the film increased with an increase in the RF power and substrate temperature. The electrical properties were measured using capacitance-voltage and current-voltage measurements on metal-insulator-semiconductor (MIS) capacitor structures. At a Ar/O2 ratio of 100/0, RF power of 400 W and substrate temperature of 400 °C, the MgTiO3 films with 6 μm thickness possess a dielectric constant of 16.2 (f=10MHz), a leakage current density of 10-9 A/mm2.

Original languageEnglish
Pages (from-to)586-594
Number of pages9
JournalJournal of Crystal Growth
Volume285
Issue number4
DOIs
Publication statusPublished - 2005 Dec 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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